MMDT3904-7
|
A type of transistor known as BJT with a voltage limit of 40V and power handling capacity of 200mW |
Diodes Incorporated |
9,255 |
|
MMDT5401-7-F
|
MMDT5401-7-F is a 6-pin SOT-363 packaged transistor with a power rating of 320mW |
Diodes Incorporated |
8,000 |
|
MGA-68563-BLKG
|
Experience improved signal clarity and range with the RF Amplifier RFIC GaAs Dvr-Amp." |
Broadcom Limited |
8,097 |
|
LX7203-22ISM
|
The LX7203-22ISM by Microchip Technology is a high-performance product designed for advanced circuit applications |
Microsemi Corporation |
6,371 |
|
FDG314P
|
MOSFET with P-Channel and -25V Voltage Limit |
Fairchild Semiconductor |
9,405 |
|
BAW56DW
|
General Purpose Diodes |
Diodes Incorporated |
9,869 |
|
BSS138DW-7
|
Compact N-channel MOSFET suitable for switching tasks, supporting a maximum voltage of 50V and a current of 0 |
Diodes Incorporated |
6,580 |
|
BAS40TW-7-F
|
Tape and reel packaging |
Diodes Incorporated |
7,274 |
|
AS1101-T
|
Tape and Reel Packaging |
ams-OSRAM USA INC. |
9,541 |
|
BC857BS-7-F
|
Diodes Inc presents BC857BS-7-F, a dual PNP bipolar transistor designed for various electronic applications |
Diodes Incorporated |
8,864 |
|
ABA-53563-TR1G
|
A versatile RF amplifier suitable for various applications due to its broad frequency range and high gain capability |
Broadcom Limited |
5,426 |
|
ABA-31563-BLKG
|
Amplifier for RF signals up to 3.5 GHz with 21.5dB gain |
Broadcom Limited |
9,734 |
|
LTC4311ISC6
|
The LTC4311ISC6 is a reliable and efficient solution for managing communication protocols in complex circuits |
Analog Devices Inc. |
5,408 |
|
LTC4311CSC6
|
1-Channel 400kHz SC-70-6 Accelerator |
Analog Devices Inc. |
5,914 |
|
PE4259SCBC-Z
|
RF Switch with SPDT Configuration for Frequency Range of 10MHz to 3GHz, with 19dB Rating in 6-Pin SC-70 Package |
pSemi |
8,103 |
|
LTC3525ESC6-5
|
LTC3525ESC6-5 is a synchronous step-up DC-DC converter that can take input voltages ranging from 0 |
Analog Devices Inc. |
7,275 |
|
LMV981MG
|
High performance |
National Semiconductor |
6,579 |
|
LMV341MG
|
Single Supply Operation |
Texas Instruments |
5,535 |
|
UPC8112TB-E3-A
|
15dB Gain, 9dB Noise Figure |
Renesas Electronics Corporation |
6,268 |
|
DDC114YU-7-F
|
In the DDC114YU Series, product DDC114YU-7-F is a dual transistor designed for surface mount applications |
Diodes Incorporated |
7,969 |
|
BAS70TW
|
The package type for BAS70TW is SOT-363, which is compact and space-saving |
Diodes Incorporated |
6,520 |
|
UMX1NFHATN
|
NPN Bipolar Junction Transistor with 50V voltage rating and 0.15A current rating, designed for automotive applications in a 6-pin UMT package |
Rohm Semiconductor |
5,002 |
|
UMD3NFHATR
|
Pre-Biased Bipolar Transistors Featuring Digital PNP+NPN |
Rohm Semiconductor |
5,512 |
|
NCS199A2SQT2G
|
Precision Current Measurement with Bi-Directional Zero-Drift Voltage Output |
onsemi |
7,564 |
|
2N7002DWQ-7-F
|
2N7002DWQ-7-F, a dual N-channel MOSFET, supports voltages up to 60V and currents up to 0.23A, featuring a low on-resistance of 4400mOhm." |
Diodes Incorporated |
5,792 |
|
FSA4157P6
|
Precise control with 1 Ohm impedance |
onsemi |
8,753 |
|
SI1912EDH-T1-E3
|
SI1912EDH-T1-E3, Dual N-channel MOSFET Transistor 1.13 A 20 V, 6-Pin SOT-363 |
Vishay Siliconix |
8,128 |
|
MGA-85563-BLKG
|
Broadcom MGA-85563-BLKG, RF Amplifier |
Broadcom Limited |
9,285 |
|
MCP40D18T-103E/LT
|
Digital Potentiometer, 10k, 7-bit, I2C |
Microchip Technology |
9,308 |
|
MCP40D17T-104E/LT
|
MCP40D17T-104E/LT, Digital Potentiometer 100kΩ 128-Position Linear Serial-I2C 6-Pin SC-70 |
Microchip Technology |
7,172 |
|
BC846AS_R1_00001
|
Powerful BJT transistors with high voltage and current ratings ideal for driving LEDs, motors, and other load applications |
Panjit International Inc. |
8,693 |
|
ISL90726UIE627Z-TK
|
Single Volatile 128-Tap Digitally Controlled Potentiometer (XDCP™) |
Renesas |
7,655 |
|
ISL90462TIE627Z-TK
|
Compact, single-voltage XDCP™ offers reliable performance in a small package, ideal for space-constrained design |
Renesas |
7,085 |
|
MC7252KDW-TP
|
Trans MOSFET N/P-CH 60V/50V 0.34A/0.18A 6-Pin SOT-363 T/R |
Micro Commercial Co |
9,830 |
|
MMDT2907AQ-7-F
|
Fast Switching and High Gain Amplification Capabili |
Diodes Incorporated |
5,176 |
|
NLV7SZ58DFT2G
|
Multi Function Gate 1-Element 2-IN CMOS Automotive AEC-Q100 6-Pin SC-88 T/R |
onsemi |
9,289 |
|
NSVMUN5233DW1T3G
|
NPN Transistors with Monolithic Bias Resistor Network |
onsemi |
9,345 |
|
PBLS4005Y-QX
|
Bipolar Transistors - Pre-Biased PBLS4005Y-Q/SOT363/SC-88 |
Nexperia USA Inc. |
5,763 |
|
PJT7002H_R1_00001
|
Compact SOTpackage ideal for small form factor designs and space-constrained applications |
Panjit International Inc. |
9,442 |
|
RN4988(TE85L,F)
|
Robust and efficient power management component |
Toshiba Semiconductor and Storage |
7,133 |
|
TC7PA34FU(T5L,F,T)
|
Robust 2-element push-pull output ensures accurate data transmission |
Toshiba Semiconductor And Storage |
3,746 |
|
UMF8NTR
|
High-power transistor for demanding applications |
Rohm Semiconductor |
9,083 |
|
UMT2NTR
|
Bipolar Transistors - BJT DUAL PNP 50V 150MA SOT-363 |
Rohm Semiconductor |
8,935 |
|
UMZ2NTR
|
Bipolar Transistors - BJT NPN/PNP 50V 150MA SOT-363 |
Rohm Semiconductor |
9,144 |
|
US6T9TR
|
Bipolar junction transistor (BJT) suitable for low-voltage design |
Rohm Semiconductor |
9,156 |
|
PUMD16-QX
|
Bipolar Transistors - Pre-Biased PUMD16-Q/SOT363/SC-88 |
Nexperia USA Inc. |
7,739 |
|
RN4989(TE85L,F)
|
Compact SOT-363 package for reduced board space and increased reliability |
Toshiba Semiconductor and Storage |
5,052 |
|
NTJS4160NT1G
|
Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363 |
onsemi |
7,906 |
|
NLV7SZ19DFT2G
|
Encoders, Decoders, Multiplexers & Demultiplexers LOG 2:1 MUX |
onsemi |
5,725 |
|
MMDT2227A_R1_00001
|
Bipolar Transistors - BJT COMPLEMENTARYNPN PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR VCE-60 40V IC-600 600mA |
Panjit International Inc. |
9,248 |
|