MT47H64M16NF-25E IT:M
|
Operating frequency of 400 MHz |
Micron Technology |
5,672 |
|
MT47H128M16RT-25E:C
|
Operating temperature range: 0 to 85 degrees |
Micron Technology |
6,149 |
|
AS4C128M16D2-25BIN
|
Operating at a low voltage of 1.8V, this DDR2 module offers efficient power consumption |
Alliance |
7,019 |
|
S29WS256P0PBFW000
|
Parallel NOR Flash with 256Mb capacity, operating at 1.8V and a speed of 66Mhz |
Infineon Technologies |
6,534 |
|
AS4C64M16D2A-25BIN
|
96-ball BGA package with 64M x 16 configuration |
Alliance |
6,830 |
|
AS4C64M16D2-25BCN
|
Offering a reliable solution for memory-intensive applications, the AS4C64M16D2-25BCN operates seamlessly at 400 MHz |
Alliance |
6,481 |
|
MT47H64M16HR-3:H
|
1Gbit 64Mx16 1.8V 84-Pin FBGA T/R/Tray DRAM Chip DDR2 SDRAM |
Micron Technology |
7,682 |
|
MT47H128M16HG-3:A
|
128MX16 DDR DRAM, 11.50 X 14 MM, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 |
Micron Technology |
6,525 |
|
MT47H32M16NF-25E IT:H
|
512 Megabit DDR2 SDRAM |
Micron Technology |
2,262 |
|
MT47H64M16NF-25E:M
|
1.8V 84-Pin FBGA T/R/Tray |
Micron Technology |
9,215 |
|
MT47H64M16NF-25E:M TR
|
64Mx16 Configuration |
Micron Technology Inc. |
7,243 |
|
MT47H64M16NF-25E AIT:M
|
MT47H64M16NF-25E AIT:M is a DDR2 1GB DRAM memory module with a 64MX16 configuration in a FBGA form factor." |
Micron Technology |
8,950 |
|
AS4C64M16D2-25BIN
|
This DDR2 SDRAM chip comes in a tray packaging, making it easy to handle and install in manufacturing processes |
Alliance |
7,725 |
|
MT47H64M16HR-25:H
|
High-density storage |
Micron Technology |
9,877 |
|
MT47H64M16HR-25E IT:H
|
Cutting-edge FBGA packaging |
Micron Technology |
8,956 |
|
MT47H64M16HR-25E:H
|
DDR DRAM, 64MX16, 0.4ns, CMOS |
Micron Technology |
7,299 |
|
MT47H128M16RT-3:C
|
Manufactured to meet environmental standards, this memory module is RoHS compliant, making it safe for use in electronic devices |
Micron Technology Inc. |
7,993 |
|
MT47H64M16NF-25E AAT:M
|
MT47H64M16NF-25E AAT:M |
Micron Technology |
6,457 |
|
AS4C128M16D2-25BCN
|
This DRAM module has a configuration of 128M x 16 and operates at 1.8 volts |
Alliance Memory, Inc. |
5,605 |
|
MT47H64M16NF-25E IT:M TR
|
1 gigabit DDR2 SDRAM 84-pin FBGA package |
Micron Technology |
8,198 |
|
MT47H32M16NF-25E IT:H TR
|
The MT47H32M16NF-25E IT:H TR is a DDR SDRAM module designed in FBGA-84(8x12.5) packaging, ensuring compliance with ROHS regulations |
Micron Technology |
7,629 |
|
MT47H128M16RT-25E IT:C
|
With its advanced architecture and high-speed capabilities, the MTHRT-E IT:C DDRSDRAM chip enables efficient data transfer and processing |
Micron Technology |
5,855 |
|
MT47H32M16NF-25E AAT:H
|
Tray packaging without quotation marks |
Micron Technology |
8,561 |
|
MT47H128M16RT-25E AIT:C
|
Microchip Technology DDR2 2G 128MX16 FBGA |
Micron Technology |
8,286 |
|
MT47H32M16NF-25E:H
|
IC DRAM 512MBIT PARALLEL 84FBGA |
Micron Technology |
5,494 |
|
MT47H64M16HW-3IT:H
|
IC DRAM 1GBIT PARALLEL 84FBGA |
Micron Technology |
9,488 |
|
IM2G16D2DBBG-25
|
128Mx16 configuration with 400MHz speed for efficient data processing |
Intelligent Memory |
5,898 |
|
MT47H64M16HR-25E(H)
|
DDR DRAM, 64MX16, 0.4ns, CMOS |
Micron Technology |
2,925 |
|
MT47H128M16RT-25EIT:C
|
With its advanced architecture and high-speed capabilities, the MTHRT-E IT:C DDRSDRAM chip enables efficient data transfer and processing |
Micron |
6,926 |
|
MT47H64M16NF-25EAIT:M
|
MT47H64M16NF-25E AIT:M is a DDR2 1GB DRAM memory module with a 64MX16 configuration in a FBGA form factor." |
Micron Technology |
4,808 |
|
MT47H128M16HG-3A
|
128MX16 DDR DRAM, 11.50 X 14 MM, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 |
Micron Technology |
7,559 |
|
AS4C32M16D2C-25BIN
|
Compact SDRAM solution for high-density applicatio |
Alliance Memory, Inc. |
7,593 |
|
MT47H64M16NF-25E AAT:M TR
|
Efficient DDR2 SDRAM solution for 1G-bit applications at 1.8V voltage level |
Micron Technology Inc. |
6,314 |
|
S29WS064RABBHI000
|
Reliable and efficient data transfer through technolog |
Infineon |
6,078 |
|
AS4C128M16MD2A-25BIN
|
Industrial temperature-rated memory for demanding systems |
Alliance Memory, Inc. |
9,813 |
|
MT47H64M16NF-25E AIT:M TR
|
Reliable DDR2 DRAM solution for industrial systems |
Micron Technology Inc. |
6,939 |
|
MT47H32M16NF-25E AAT:H TR
|
Robust and reliable memory solution for demanding applications and environment |
Micron Technology Inc. |
5,677 |
|
AS4C64M16D2A-25BANTR
|
Compact FBGA package with high pin count for increased connectivity and reduced footprin |
Alliance Memory, Inc. |
8,055 |
|
V59C1G01168QBJ25
|
Packed with a substantial b of memory, the VCBJ is a reliable and efficient memory chip that excels in demanding computing environment |
PROMOS |
2,809 |
|
AS4C64M16D2A-25BCN
|
Reliable and efficient SDRAM for embedded systems and IoT devices requiring high memory capacity |
Alliance Memory, Inc. |
6,590 |
|
AS4C16M16D2-25BIN
|
megabytes of synchronous DRAM storage capacity for efficient computing |
Alliance Memory, Inc. |
7,633 |
|
AS4C32M16D2A-25BCNTR
|
-Pin FBGA T/R DDRSDRAM Module for Industrial Us |
Alliance Memory, Inc. |
8,801 |
|
AS4C128M16D2A-25BIN
|
Fast and efficient memory solution for compute |
Alliance Memory, Inc. |
9,051 |
|
AS4C32M16D2A-25BIN
|
Advanced DDRSDRAM chip for reliable data transfe |
Alliance Memory, Inc. |
8,205 |
|
AS4C64M16D2B-25BCN
|
Reliable and efficient FBGA- package configuratio |
Alliance Memory, Inc. |
7,143 |
|
S29WS128P0PBFW000
|
NOR Flash Memory with Parallel/Serial Interface |
Infineon Technologies |
3,068 |
|
S29WS512P0PBFW000
|
NOR Flash with 512Mb capacity |
Infineon Technologies |
2,772 |
|
S29WS128P0SBFW000
|
Parallel and Serial Interface |
Infineon Technologies |
6,523 |
|
MT47H32M16NF-25E:H TR
|
DDR2 512MB 32M x 16 FBGA DRAM |
Micron Technology |
6,824 |
|
AS4C128M16D2A-25BAN
|
DDR2 SDRAM chip with 2Gbit capacity, organized as 128M x 16, operating at 1.8V, housed in an 84-Ball FBGA package |
Alliance Memory |
6,892 |
|