|
IRHNJ57Z30
|
Trans MOSFET N-channel 30V 22A 3-Pin SMD-0.5 |
infineon |
8,677 |
|
|
30LJQ100
|
30A 100V High-Reliability Schottky Diode in an SMD-0.5 Package |
Infineon |
6,251 |
|
|
HFB20HJ20C
|
0A rectifier diode for high frequency switching applications with 20ns response time |
Infineon |
9,533 |
|
|
JANS1N6843CCU3
|
Space-rated diode |
infineon |
6,506 |
|
|
JANSR2N7546U3
|
HIREL HEXFET RHD QPL |
Infineon Technologies AG |
7,447 |
|
|
IRHLNJ797034
|
Radiation-hardened, negative 60 volts, negative 22 amps, single-channel P-channel MOSFET, labeled as IRHLNJ797034, packaged in SMD-0.5 |
Infineon Technologies AG |
9,691 |
|
|
JANSR2N7587U3
|
Power Field Transistor |
Infineon Technologies AG |
8,579 |
|
|
IRHNJ67230
|
N-Channel Silicon Metal-oxide Semiconductor FET Power Field-Effect Transistor 16A I(D) 200V 0.13ohm 1-Element SMD-0.5 3 PIN |
infineon |
5,817 |
|
|
IRHLNJ77034
|
N-channel silicon transistor with a voltage rating of 60V and current rating of 22A in a surface-mount package |
infineon |
7,219 |
|
|
30CLJQ100
|
Rectifier Diode, Schottky, 30A, 100V V(RRM) |
Infineon Technologies AG |
8,919 |
|
|
15LJQ100
|
Rectifier Diode with Schottky Configuration: A diode designed for rectification purposes, utilizing Schottky technology |
Infineon Technologies AG |
5,854 |
|
|
IRHNJ67130
|
COTS Features for potential applications |
infineon |
6,259 |
|
|
JANSR2N7545U3
|
100 Volts, 12.5 Amps |
infineon |
9,602 |
|
|
JANSR2N7485U3
|
N-channel 130V MOSFET with 20A current rating in SMD-0.5 package |
infineon |
8,847 |
|
|
JANSR2N7481U3
|
MOSFET Transistor N-Ch 100V 22A SMD-0.5 |
infineon |
7,593 |
|
|
JANSR2N7480U3
|
SMD N-Type MOSFET with a Maximum Voltage Rating of 60V and a Current Handling Capacity of 22A |
infineon |
8,053 |
|
|
JANSR2N7479U3
|
Power transistor featuring N-type channel, 30 volts drain-source voltage, 22 amperes continuous drain current, and compact SMD package |
infineon |
8,542 |
|
|
IRL5NJ7404
|
1A I(D) Power Field-Effect Transistor |
infineon |
9,577 |
|
|
IRL5NJ024
|
5V n-channel surface mount |
infineon |
8,433 |
|
|
IRHNJ597230
|
MOSFET P-channel transistor with a 200V rating and an 8A current capacity in a SMD-0.5 package |
infineon |
6,965 |
|
|
IRHNJ57130
|
The IRHNJ57130 is a radiation-hardened N-channel MOSFET with a voltage rating of 100V and a current rating of 22A, enclosed in an SMD-0 |
infineon |
9,852 |
|
|
IRHNJ57034
|
Potential Applications: Commercial Off-The-Shelf, 100 kilorads (silicon) Total Ionizing Dose, SMD-0.5 package, N-channel MOSFET |
infineon |
8,197 |
|
|
IRF5NJ9540
|
Power Field-Effect Transistor with 18A I(D), 100V, 0.117ohm, P-Channel, Silicon MOSFET, Hermetically Sealed, SMD0.5, 3 PIN |
infineon |
7,112 |
|
|
IRF5NJ540
|
SMD-0.5 Single N-Channel Hexfet Power Mosfet, 100V, 75W, 104nC |
infineon |
7,315 |
|
|
IRF5NJ5305
|
Power MOSFET transistor with P-channel design |
infineon |
8,129 |
|
|
HFB25HJ20
|
Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, HERMETIC SEALED, SMD-0.5, 3 PIN |
Infineon Technologies AG |
5,072 |
|
|
30CLJQ150
|
Schottky Rectifier Diode with 30A Current Rating and 150V Reverse Recovery Voltage |
Infineon Technologies AG |
9,301 |
|
|
30SLJQ060
|
SMD0.5 Schottky Diode |
Infineon Technologies AG |
9,292 |
|
|
30SCLJQ045
|
Schottky Rectifier Diode 45V 30A 3-Pin SMD-0.5 |
Infineon Technologies AG |
6,307 |
|
|
JANTXV1N6844U3
|
Rectifier Diode Schottky 100V 15A 3-Pin SMD-0.5 Tray |
Microchip |
6,354 |
|
|
JANS1N6844U3
|
Rectifier Diode Schottky 100V 15A 3-Pin SMD-0.5 |
Microchip |
5,734 |
|
