|
2N7002T-7-F
|
523 N-Channel Transistor 7.5 Ohm Enhancement Mode 60 V |
Diodes Incorporated |
3,819 |
|
|
DMG1012TQ-7
|
N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes Incorporated |
5,218 |
|
|
DTA143EE
|
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP |
Yangjie Technology |
7,784 |
|
|
NE68119
|
NE68119 Bipolar Transistor: L Band Small Signal RF Device, Plastic Enclosure, NPN Silicon Technology |
Nec Compound Semiconductor Devices Ltd |
9,708 |
|
|
NE85619-T1-A
|
5619-T1-A L BAND Si NPN |
CEL |
5,839 |
|
|
NE68819
|
1A I(C) Silicon S Band NPN Bipolar Transistor PLASTIC RF SC-90 |
CEL |
7,212 |
|
|
NE68519
|
Transistors for RF Applications |
CEL |
8,545 |
|
|
NE85619
|
NPN High Frequency RF Bipolar Transistors NE85619 |
CEL |
6,660 |
|
|
MMBT2907AT-7-F
|
This PNP bipolar junction transistor has a power dissipation of 150mW |
Diodes Incorporated |
5,678 |
|
|
DMN313DLT-7
|
SOT-523 MOSFET, N-channel type, rated for 30 volts and 0.27 amps |
Diodes Incorporated |
7,246 |
|
|
DMP21D0UT-7
|
P-Channel Mosfet with 20V rating and 495mOhm resistance |
Diodes Incorporated |
5,541 |
|
|
DMN5L06TK-7
|
Small-Signal FET with N-Channel and Silicon Construction, rated at 0.28A Drain Current and 50V Voltage, housed in a Plastic Package |
Diodes Incorporated |
5,068 |
|
|
DMN601TK-7
|
Power transistor |
Diodes Incorporated |
8,313 |
|
|
DMN2004TK-7
|
A versatile semiconductor component |
Diodes Incorporated |
8,968 |
|
|
BAV170T-7-F
|
Rectifier diode |
Diodes Incorporated |
6,879 |
|
|
BAS40-04T-7-F
|
Schottky Diode 40V 0.2A SOT-523 T/R |
Diodes Incorporated |
5,911 |
|
|
BAV199T-7-F
|
Capable of versatile applications |
Diodes Incorporated |
8,142 |
|
|
BC847AT
|
Explore the BC847AT, a component renowned for its efficiency in electrical circuits |
Diodes Incorporated |
7,947 |
|
|
BC847BT-7-F
|
NPN bipolar transistor with 45V and 0.1A ratings |
Diodes Incorporated |
5,904 |
|
|
BC847CT-7-F
|
Bipolar NPN Transistor, 45V |
Diodes Incorporated |
8,743 |
|
|
DMP2004TK-7
|
Trans MOSFET P-CH 20V 0.43A 3-Pin SOT-523 T/R |
Diodes Incorporated |
6,022 |
|
|
DMN55D0UT-7
|
N-Channel Enhancement MOSFET SOT-23 |
Diodes Incorporated |
7,551 |
|
|
BAV99T-7-F
|
SOT-523 Package |
Diodes Incorporated |
7,243 |
|
|
RB751S-40-TP
|
RB751S-40-TP is a rectifier component utilizing Schottky diode technology, designed to handle voltages up to 40V and currents of up to 200 mA |
Micro Commercial Co |
5,143 |
|
|
DTC144EE
|
Maximize performance and minimize complexity with our pre-biased bipolar transistor solution |
Onsemi |
5,770 |
|
|
BSS138BKT-TP
|
N-Channel 50 V 340mA 270mW SOT-523 Surface Mount Transistor |
Micro Commercial Co |
7,213 |
|
|
2DA1774S-7-F
|
SOT-523 Bipolar Junction Transistor PNP General Purpose 50V 0.15A 150mW |
Diodes Incorporated |
3,758 |
|
|
BAV99TQ-13-F
|
High-speed diode ideal for a variety of applications |
Diodes Incorporated |
6,725 |
|
|
DMN55D0UTQ-7
|
Trans MOSFET N-CH 50V 0.16A 3-Pin SOT-523 T/R Automotive AEC-Q101 |
Diodes Incorporated |
5,056 |
|
|
BC847CT-TP
|
Trans GP BJT NPN 45V 0.1A 150mW 3-Pin SOT-523 T/R |
Micro Commercial Co |
7,402 |
|
