|
BAT40V-7
|
Diode Array Schottky 40V SOT563 |
Diodes Incorporated |
4,597 |
|
|
NTZD3155CT1G
|
ROHS certified NTZD3155CT1G SOT-563 MOSFETs |
Onsemi |
7,694 |
|
|
NUF2042XV6T1G
|
ESD Suppressor Diode Diode Array Bi-Dir 5.25V 6-Pin SOT-563 T/R |
Onsemi |
6,726 |
|
|
D5V0F4U6V-7
|
3K voltage protection |
Diodes Incorporated |
9,518 |
|
|
DCX144EH-7
|
Pre-Biased Bipolar Transistors - 150MW with 47K Resistance |
Diodes Incorporated |
9,307 |
|
|
EM6J1T2R
|
1.2V Drive Dual P-Channel MOSFET" |
Rohm Semiconductor |
7,967 |
|
|
EM6K31T2R
|
EM6K31T2R product, RoHS certified, ships within 24 hours - Manufactured in 2023 |
Rohm Semiconductor |
9,119 |
|
|
EM6K6T2R
|
20V Dual N-CH MOSFET .3A .15W |
Rohm Semiconductor |
5,101 |
|
|
EM6K7T2R
|
Dual MOSFET Transistor EM6K7T2R |
Rohm Semiconductor |
5,238 |
|
|
EM6M2T2R
|
Transistor MOSFET with N/P-Channel Silicon technology, 20V voltage, 0.2A current, and a 6-Pin EMT package |
Rohm Semiconductor |
5,989 |
|
|
EMD22T2R
|
Dual digital transistor from ROHM, EMD22T2R |
Rohm Semiconductor |
6,984 |
|
|
EMD29T2R
|
EMD29T2R is a small signal bipolar transistor featuring a collector current capability of 0 |
Rohm Semiconductor |
5,759 |
|
|
EMD5T2R
|
EMD5T2R Product Description: Small-Signal Bipolar Transistor with 0 |
Rohm Semiconductor |
9,803 |
|
|
EMH10T2R
|
56 units at 5 milliamperes and 5 volts |
Rohm Semiconductor |
9,854 |
|
|
EMT1T2R
|
EMT1T2R Semiconductor: PNP Transistor, 50 Volts, 0.15 Amperes, 6 Pins, Tape-and-Reel Encapsulation |
Rohm Semiconductor |
8,503 |
|
|
MP2151GTF-Z
|
Versatile and easy-to-use voltage converter |
Monolithic Power Systems Inc. |
8,122 |
|
|
PEMH11,115
|
Dual NPN transistors utilizing bipolar junction technology, equipped with BRT capability, designed for 50V voltage and 0 |
Nexperia USA Inc. |
9,063 |
|
|
PMBT3904VS,115
|
Trans GP BJT NPN 40V 0.2A 360mW 6-Pin SOT-666 T/R |
Nexperia USA Inc. |
9,141 |
|
|
RSB12JS2T2R
|
6-Pin EMD Zener Diode Array: Dual 12V, 20% Tolerance, 150mW, Tape and Reel Packaging |
Rohm Semiconductor |
6,160 |
|
|
SI1040X-T1-GE3
|
MOSFET -8V Vds V Vgs SC89-6 |
Vishay Siliconix |
8,676 |
|
|
SI1077X-T1-GE3
|
Si1077X Series 20 V 1.4 A 78 mOhm Surface Mount P-Channel Mosfet - SC89-6 |
Vishay Siliconix |
7,855 |
|
|
SMA661ASTR
|
Fully integrated GPS LNA IC with wide band low power amplifier |
STMicroelectronics |
6,296 |
|
|
SSM6N44FE,LM
|
Trans MOSFET N-CH Si 20V 0.1A 6-Pin ES T/R |
Toshiba Semiconductor and Storage |
9,730 |
|
|
SSM6N56FE,LM
|
Small-signal N-MOSFET |
Toshiba Semiconductor and Storage |
5,475 |
|
|
EMH2T2R
|
With its NPN+NPN configuration and built-in bias resistors, the EMH2T2R is a compact Dual Digital Transistor in SOT-563 packaging |
Rohm Semiconductor |
5,167 |
|
|
EMH9T2R
|
Dual NPN bipolar transistors pre-biased at 50V and 70mA |
Rohm Semiconductor |
6,837 |
|
|
EMD6T2R
|
2-Element Bipolar Transistor suitable for small signal applications |
Rohm Semiconductor |
5,758 |
|
|
EMD9T2R
|
Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin EMT T/R |
Rohm Semiconductor |
5,497 |
|
|
BAS70VV,115
|
Diode Schottky 0.07A 6-Pin SOT-666 T/R |
Nexperia USA Inc. |
5,448 |
|
|
SP3004-04XTG
|
Unidirectional 6V SOT-563 TVS/ESD protection device |
Littelfuse Inc. |
5,407 |
|
|
PMDT290UNE,115
|
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
Nexperia USA Inc. |
8,212 |
|
|
MP1477HGTF-P
|
MP1477HGTF-P 1.2 Megahertz High Temperature |
Monolithic Power Systems Inc. |
8,748 |
|
|
DMG1023UV-7
|
Diodes Inc DMG1023UV-7 Dual P-channel MOSFET Transistor, 0.68 A, -20 V, 6-Pin SOT-563 |
Diodes Incorporated |
4,140 |
|
|
FDY3000NZ
|
FDY3000NZ, Dual N-channel MOSFET Transistor 0.6A 20V, 6-Pin SC-89, SOT-563F |
onsemi |
6,152 |
|
|
NUP4102XV6T1G
|
ESD Suppressor TVS Bi-Dir 12V Automotive AEC-Q101 6-Pin SOT-563 T/R |
onsemi |
9,343 |
|
|
DMG1024UV-7
|
20V N-channel MOSFET capable of handling up to 1.38A of current flow |
Diodes Incorporated |
7,019 |
|
|
SP1001-05XTG
|
5-channel TVS diode and suppressor for ESD |
Littelfuse Inc. |
7,583 |
|
|
TPS562207DRLR
|
Switching Voltage Regulators 4.3-V to 17-V input, 2-A synchronous buck converter in SOT563 6-SOT-5X3 -40 to 125 |
TI |
5,652 |
|
|
ESDALC6V1P6
|
ESD Suppressor TVS Uni-Dir 3V 6-Pin SOT-666IP T/R |
STMicroelectronics |
8,409 |
|
|
NTZD3154NT5G
|
Trans MOSFET N-CH 20V 0.54A 6-Pin SOT-563 T/R |
onsemi |
7,452 |
|
|
NTZD3155CT2G
|
N/P-MOSFET transistor with complementary pair characteristics: Unipolar and compatible with voltages ranging from 20 volts to -20 volts |
Onsemi |
7,858 |
|
|
SBC847BPDXV6T1G
|
0.1A Collector Current |
onsemi |
9,573 |
|
|
NST3904DXV6T1G
|
Trans GP BJT NPN 40V 0.2A 500mW 6-Pin SOT-563 T/R |
onsemi |
5,219 |
|
|
NSVBC114YDXV6T1G
|
SS RSTR XSTR TR bipolar transistors with pre-biased configuration |
Onsemi |
7,638 |
|
|
NSVBC114EDXV6T1G
|
Trans Digital BJT NPN 50V 100mA 500mW Automotive AEC-Q101 6-Pin SOT-563 T/R |
onsemi |
8,732 |
|
|
NCP170BXV300T2G
|
LDO Regulator Pos 3V 0.15A 6-Pin SOT-563 T/R |
onsemi |
9,619 |
|
|
NUP5120X6T1G
|
40W@8/20us TVS/ESD |
Onsemi |
6,729 |
|
|
BC847BPDXV6T1G
|
Trans GP BJT NPN/PNP 45V 0.1A 500mW 6-Pin SOT-563 T/R |
onsemi |
9,163 |
|
|
BC847CDXV6T1G
|
Bipolar Transistor BC847CDXV6T1G NPN |
Onsemi |
7,118 |
|
|
NTZS3151PT1G
|
Trans MOSFET P-CH 20V 0.86A 6-Pin SOT-563 T/R |
onsemi |
8,845 |
|
