1SS301(TE85L,F)
|
Trusted Partner Program for Reliable and Authentic Supply Chain |
Toshiba |
6,819 |
|
BC807-40W
|
BC807-40W is a general transistor with PNP configuration |
Onsemi |
8,575 |
|
DMN2004WK
|
MOSFET DMN2004WK: N-Channel |
diodes incorporated |
9,930 |
|
ESDCAN05-2BWY
|
ESD Suppressor Diode TVS Bi-Dir 36V 61Vc Automotive AEC-Q101 3-Pin SOT-323 T/R |
Stmicroelectronics |
7,352 |
|
DDTC144EUA
|
Pre-Biased Bipolar Transistors |
diodes incorporated |
5,135 |
|
BAV199W
|
0.2A 30V SCHOTTKY SOT-23 |
Diotec Semiconductor |
5,765 |
|
DMG1012UW
|
Environmentally-friendly SOT-323 MOSFETs |
Ams Osram |
9,565 |
|
BFR181W
|
Bipolar RF Transistors BFR181W |
infineon |
6,273 |
|
BFR182W
|
BFR182W: RF Bipolar Transistors |
infineon |
5,947 |
|
BFR92AW
|
5 GHz Transistor |
NXP |
9,351 |
|
2SA1576A
|
ROHM Semiconductor |
ROHM |
6,980 |
|
ASML-5822
|
Presenting ASML-5822: a PIN diode limiter integrating Schottky technology to optimize performance in low-power settings |
Broadcom Limited |
5,175 |
|
BAP64-05W,115
|
Product BAP64-05W,115: PIN diodes designed for RF sub-systems in TAPE-7 packaging |
Nxp |
5,100 |
|
2SC4116-Y
|
NPN Bipolar Junction Transistor for automotive applications |
Toshiba Semiconductor And Storage |
5,938 |
|
2SC4901YK-TL-E
|
<p>Support is limited to customers who have already adopted these products.</p> |
Renesas Electronics America Inc |
7,528 |
|
DAP236U
|
Versatile diodes for various electronic functions |
Rohm Semiconductor |
3,791 |
|
DAN217UM
|
Versatile diodes for power, switching, and general applications |
Rohm Semiconductor |
7,177 |
|
HSMP-389F-TR1G
|
Product Description: HSMP-389F-TR1G - PIN Diodes with a Breakdown Voltage of 100 Volts and Capacitance of 0.3 picoFarads |
broadcom limited |
9,507 |
|
2SC6100
|
With its 3-pin configuration, this transistor offers reliable performance in a compact form factor |
Toshiba Semiconductor And Storage |
3,190 |
|
2SA1576
|
Versatile power device suitable for high-frequency, high-voltage circuits in automotive systems and motor drive |
Rohm Semiconductor |
7,310 |
|
BFT92W
|
Robust and efficient component for wireless communication system |
Nxp |
5,126 |
|
SSM3J15FU
|
30 Volt Small Signal MOSFET |
Toshiba Semiconductor And Storage |
4,316 |
|
HSB226WKTL-E
|
0.05A Schottky Rectifier Diode with 2 Elements, rated at 25V |
Renesas Electronics America Inc |
4,860 |
|
AT-32032
|
Transistors with both majority and minority charge carriers |
Onsemi |
4,543 |
|
2SA1745-7-TL-E
|
Bipolar PNP Transistor, 0.5A 15V |
Onsemi |
4,945 |
|
BFS505
|
Compact NPN transistor in a small SOT-packag |
Nxp |
2,001 |
|
HSB123TR-E
|
High speed switching diode for HSB123TR-E |
Renesas Electronics America Inc |
3,097 |
|
LMDL6050T1G
|
Switching Diode |
Lrc |
2,765 |
|
BFT93W
|
Introducing BFT93W by NXP Semiconductors, a high-performance PNP transistor engineered for wideband applications up to 4 GHz." |
Nxp |
7,991 |
|
DF3A5.6FU
|
DIODE 5.6 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, 1-2P1A, USM, 3 PIN, Voltage Regulator Diode |
Toshiba Semiconductor And Storage |
2,319 |
|
SSM3K7002BF
|
TRANSISTOR 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, S-MINI, 2-3F1F, SC-59, TO-236MOD, 3 PIN, FET General Purpose Small Signal |
Toshiba Semiconductor And Storage |
3,859 |
|
RYU002N05
|
ROHM Semiconductor |
Rohm Semiconductor |
2,263 |
|
2N7002BKW
|
N-channel Trench MOSFET |
nexperia |
3,126 |
|