|
DMN5L06DWK-7
|
Diodes Inc DMN5L06DWK-7 Dual N-channel MOSFET Transistor, 0.305 A, 50 V, 6-Pin SOT-363 |
Diodes Incorporated |
5,064 |
|
|
BAV99SH6327XTSA1
|
AEC-Q101 compliant rectifier diode designed for automotive systems, capable of swift switching with a response time of 4ns |
Infineon Technologies |
5,630 |
|
|
DMP2200UDW-7
|
Dual Mosfet, P-Ch, 20V, 0.9A, SOT-363 |
Diodes Incorporated |
7,387 |
|
|
2N7002DWH6327XTSA1
|
Product Description: Dual N-Channel 60V 3 Ohm 0.4nC OptiMOS Small Signal MOSFET - SOT-363 |
Infineon Technologies |
9,273 |
|
|
2N7002DWA-7
|
Metal-oxide Semiconductor FET N-Channel Small Signal Field-Effect Transistor |
Diodes Incorporated |
5,024 |
|
|
BSD235CH6327XTSA1
|
N and P-Channel MOSFET with 20V Vds, 950mA and -530mA Id in SOT-363-6 package |
Infineon Technologies |
7,544 |
|
|
SSM6N7002KFU,LF
|
MOSFET designed for ESD protection in small-signal applications |
Toshiba Semiconductor And Storage |
8,559 |
|
|
BSD840NH6327XTSA1
|
With a current rating of 880 mA and voltage rating of 20 V |
Infineon Technologies |
7,325 |
|
|
MMDT3946-7-F
|
Bipolar Transistors - BJT |
Diodes Incorporated |
4,597 |
|
|
DMC3400SDW-13
|
Enhancement Mode MOSFET Pair with 30V Voltage Rating, 20Vgs, 55pF Capacitance, and 0.6nC Charge |
Diodes Incorporated |
5,027 |
|
|
SI1902CDL-T1-GE3
|
Trans MOSFET N-CH 20V 1A 6-Pin SC-70 T/R |
Siliconix |
7,920 |
|
|
DRDNB21D-7
|
Diodes Inc, DRDNB21D-7, Dual NPN Digital Transistor, 100 mA 50 V, 6-Pin SOT-363 |
Diodes Incorporated |
6,313 |
|
|
SGA0363Z
|
Ideal for Wideband Applications |
Qorvo |
9,286 |
|
|
SGA3563Z
|
The SGA3563Z is a wide band low power amplifier capable of operating from 0MHz to 5000MHz |
Qorvo |
9,466 |
|
|
PSA-0012+
|
Surface-Mount RF Amplifier with RoHS Certification and ESD Protection |
Mini-Circuits |
7,533 |
|
|
D5V0F4U6S-7
|
SOT-363 Package |
Diodes Incorporated |
6,220 |
|
|
SI1900DL-T1-E3
|
Small outline transistor with 3V output at low current |
Siliconix |
9,643 |
|
|
DMN2004DWK-7
|
Dual N-Channel MOSFET |
Diodes Incorporated |
9,164 |
|
|
DMN65D8LDW-7
|
The DMN65D8LDW-7 MOSFETs |
Diodes Incorporated |
7,181 |
|
|
BC846AS-7
|
BC846AS-7 is a type of Bipolar Junction Transistor (BJT) capable of handling currents up to 100mA and voltages of 65V |
Diodes Incorporated |
8,705 |
|
|
ABA-51563-BLKG
|
Versatile amplifier that operates over a wide frequency range with low power consumption, ideal for various applications |
Broadcom Limited |
8,325 |
|
|
ABA-52563-TR1G
|
Compact and Versatile Radio Frequency Amplification Device |
Broadcom Limited |
4,826 |
|
|
74AVC1T45GW
|
Integrated Circuit, NXP, 74AVC1T45GW, Reel |
NXP |
2,966 |
|
|
MGA-86563-BLKG
|
AVAGO TECHNOLOGIES MGA-86563-BLKG RF amplifier MMIC integrated circuit |
Broadcom Limited |
6,664 |
|
|
BSS138DW-7-F
|
MOSFET Dual N-Channel 50V 0.2A SOT363 Diodes Inc BSS138DW-7-F Dual N-channel MOSFET Transistor, 0.2 A, 50 V, 6-Pin SOT-363 |
Diodes Incorporated |
6,150 |
|
|
BC847BS-7-F
|
Transistor Dual NPN 45V 0.1A SOT363-6 |
Diodes Incorporated |
4,203 |
|
|
ABA-54563-TR1G
|
RF Amp Chip Single GP 3.4GHz 6-Pin SOT-363 T/R |
Broadcom Limited |
6,299 |
|
|
ZXGD3009DYTA
|
DiodesZetex ZXGD3009DYTA, Dual Non-Inverting Buffer, Maximum of 40 V, 6-Pin SOT-363 |
Diodes Incorporated |
6,431 |
|
|
BFS483H6327XTSA1
|
Product BFS483H6327XTSA1 is a 12-volt |
Infineon Technologies |
6,257 |
|
|
BGA2866,115
|
RF Amp Single MMIC Amp 2.2GHz 5.5V 6-Pin TSSOP T/R |
Freescale Semiconductor |
2,379 |
|
|
DDC143ZU-7-F
|
Biased transistor in SOT363 package, supplied in tape and reel packaging for easy handling |
Diodes Incorporated |
6,229 |
|
|
DMN32D4SDW-7
|
Trans MOSFET N-CH 30V 0.65A 6-Pin SOT-363 T/R |
Diodes Incorporated |
2,903 |
|
|
DRTR5V0U4SL-7
|
ESD Suppressor Diode TVS Uni-Dir 5.5V 12.5Vc 6-Pin SOT-363 T/R |
Diodes Incorporated |
9,862 |
|
|
QPA2263ASR
|
Broadband RF amplifier covering DC to GHz frequency range with high sensitivit |
Qorvo |
3,302 |
|
|
SQ1421EDH-T1_GE3
|
Field-effect transistor with 60V P-channel |
Siliconix |
5,396 |
|
|
SSM6N43FU,LF
|
Small-signal MOSFET |
Toshiba Semiconductor And Storage |
7,981 |
|
|
SI1424EDH-T1-GE3
|
Trans MOSFET N-CH 20V 4A 6-Pin SC-70 T/R |
Siliconix |
9,562 |
|
|
UMF5NTR
|
Combination of PNP transistor with low VCE(sat) and NPN digital transistor |
Rohm Semiconductor |
7,946 |
|
|
SI1442DH-T1-GE3
|
N-Channel MOSFET SC-70-6, RL |
Siliconix |
9,393 |
|
|
SQ1912EH-T1_GE3
|
Compliant with ROHS regulations |
Siliconix |
7,645 |
|
|
SI1869DH-T1-BE3
|
Power Switch Hi Side 1-OUT 0.303Ohm 6-Pin SC-70 |
Siliconix |
5,917 |
|
|
SI1553CDL-T1-BE3
|
20V/300MA MOSFET |
Siliconix |
9,523 |
|
|
SI1416EDH-T1-BE3
|
MOSFET 30V N-CHANNEL (D-S) |
Siliconix |
7,793 |
|
|
SMA3103-TL-E
|
RF Amplifier Single Wideband Amplifier 3.3GHz 5.5V |
Onsemi |
5,232 |
|
|
QPA4463ASR
|
High-performance RF amplifier for wireless applications |
Qorvo |
3,297 |
|
|
QPA4563CTR7
|
SiGe HBT technology offers low noise and high gain |
Qorvo |
7,582 |
|
|
BSS138DW
|
Microscopic Signal Field-Effect Transistor" |
Diodes Incorporated |
7,162 |
|
|
BAV99SH6433XTMA1
|
General-purpose diodes for various applications |
Infineon Technologies |
8,181 |
|
|
BZX84C5V6TS-7-F
|
3 independent 200mW 5.6V SOT-363 Zener diodes ROHS |
Diodes Incorporated |
7,454 |
|
|
BC847BS-TP
|
The BC847BS-TP is a small-signal NPN transistor commonly used in various electronic circuits |
Micro Commercial Co |
5,164 |
|
