TC58NVG2S3EBAI5
|
EEPROM IC with 512M X 8 memory capacity |
kioxia |
9,989 |
|
TC58NVG1S3EBAI5
|
Suitable for industrial applications requiring reliable performance and durability |
kioxia |
9,678 |
|
NAND01GR3B2BZA6E
|
High-density storage |
Stmicroelectronics |
5,539 |
|
TC58NVG0S3HBAI4
|
28MX8 flash memory, TFBGA-63, PBGA63, plastic ball grid array 63, thin fine pitch ball grid array 63 |
Kioxia |
5,017 |
|
TC58NYG1S3EBAI5
|
Small flash memory chip |
Kioxia |
7,247 |
|
TC58BVG2S0HBAI4
|
4 Gbit CMOS NAND EEPROM with 3.3V voltage |
Kioxia America, Inc. |
8,082 |
|
TH58NYG3S0HBAI4
|
Small TFBGA Package |
Kioxia America, Inc. |
6,248 |
|
TC58NYG2S3EBAI5
|
Plastic PBGA63 Package |
kioxia |
7,028 |
|
TC58NVG1S3HBAI4
|
TFBGA 63-Pin NAND Flash Parallel 3.3V 2G-bit |
Kioxia America, Inc. |
8,405 |
|
NAND01GW3B2CZA6E
|
LEAD FREE, VFBGA-63 |
Micron Technology |
9,195 |
|
MT47H512M8WTR-25E:C
|
512Mx8 Configuration |
Micron Technology |
9,943 |
|
TC58NYG2S0HBAI4
|
1.8V NAND Flash Parallel 63-Pin TFBGA 4G-bit 512M x 8 |
Kioxia America, Inc. |
6,242 |
|
TC58BVG1S3HBAI4
|
Compact 63-Pin TFBGA Package |
Kioxia America, Inc. |
6,638 |
|
TH58BYG2S3HBAI4
|
Compact 63-Pin BGA package offers reliable data storage |
Kioxia America, Inc. |
6,850 |
|
TC58NYG1S3HBAI4
|
TC58NYG1S3HBAI4 |
Kioxia |
3,945 |
|
NAND512R3A2SZAXE
|
VFBGA-63(9x11) NAND FLASH ROHS |
Micron Technology |
6,902 |
|
TC58BYG0S3HBAI4
|
NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) |
Kioxia America, Inc. |
9,825 |
|