2SK3568
|
Compact package with and A ratings for versatili |
Toshiba |
7,558 |
|
2SK3667
|
Lead-free silicon transistor with 1 ohm resistance |
Toshiba |
6,694 |
|
2SK2232
|
Power transistor with low on-resistance for efficient switching |
Toshiba |
6,250 |
|
FDPF7N50U
|
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220F Rail |
Onsemi |
6,358 |
|
IPA60R160C6
|
N-Channel Power MOSFET |
INFINEON |
7,725 |
|
BA90DD0T
|
LDO Voltage Regulators LDO REG 9V 2A 3PIN |
Rohm Semiconductor |
8,461 |
|
FQPF16N25C
|
With its characteristics of high current handling capability |
Onsemi |
6,977 |
|
MJF18008
|
Bipolar Power Transistor MJF18008, featuring an 8.0 A current capacity and 450 V voltage rating |
Onsemi |
9,526 |
|
STP20NM50FP
|
Three-pin transistor MOSFET with N-channel design capable of handling 500 volts and 20 amps |
Stmicroelectronics |
7,117 |
|
TK17A80W
|
Low VDS, Low RDS(on) Performance for Increased Efficien |
Toshiba |
8,094 |
|
2SK2508
|
MOSFET 220NIS2 PLN is discontinued as of October 2010 and phased out by January 2011 before becoming obsolete in April 2011 |
Toshiba |
5,362 |
|
2SK2312
|
N-channel MOSFET with a voltage rating of 60V and a current rating of 45A |
Toshiba |
7,381 |
|
STP6NC60FP
|
MOSFET with 600V and 6A |
Stmicroelectronics |
5,959 |
|
MD1803DFP
|
Trans Digital BJT NPN 700V 10mA 40000mW 3-Pin(3+Tab) TO-220FP Tube |
STMicroelectronics |
8,074 |
|
STTA506F
|
STTA506F Diode by ST Microelectronics" |
Stmicroelectronics |
9,899 |
|
2SK3569
|
Compact TO- package with robust performance capabiliti |
TOSHIBA |
5,480 |
|
MURF1660CT
|
High efficient recovery rectifiers designed for demanding applications |
Onsemi |
5,131 |
|
R5009FNX
|
The product labeled R5009FNX is a Trans MOSFET |
Rohm Semiconductor |
6,636 |
|
SPA12N50C3
|
Tube Packaging for SPA12N50C3 N-Channel MOSFET |
Infineon |
7,030 |
|
SF10L60U
|
Rectifier diode with one phase and one element, capable of handling 10A and 600V V(RRM), composed of silicon, packaged in TO-220AC |
Shindengen |
8,927 |
|
D10LC20U
|
10A, 200V V(RRM) rectifier diode made of silicon, designed with 1 phase and 2 elements, packaged in TO-220AB with 3 pins |
Shindengen |
6,953 |
|
SSS4N60B
|
This MOSFET is housed in a TO-220F package with 3 pins and a tab for easy mounting on a circuit board |
Onsemi |
8,852 |
|
SPA04N60C3
|
SPA04N60C3 is compliant with the RoHS directive, ensuring it is environmentally friendly |
Infineon |
7,561 |
|
IPA60R600CP
|
N-Channel TO-220F Transistor |
Infineon |
8,687 |
|
IPA60R800CE
|
Specification of IPA60R800CE: 600V N-Channel MOSFET Transistor rated at 8.4A |
infineon |
6,914 |
|
UGF10GCT
|
Efficient and robust diode suitable for various industrial applications |
vishay |
6,160 |
|
SPA20N65C3
|
TO-220FP Tube Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) |
INFINEON |
8,578 |
|
SPA07N65C3
|
TO-220FP packaged N-channel MOSFET designed specifically for automotive use, featuring a maximum rating of 650 volts and 7.3 amps |
Infineon |
9,138 |
|
SF5LC20U
|
Diode SF5LC20U from Shindengen |
shindengen |
8,045 |
|
SF5L60U
|
Product spotlight: SF5L60U rectifier diode - low-loss efficiency |
shindengen |
7,661 |
|
SFS9620
|
P-Channel MOSFET with 200V voltage rating, 3A current rating, and 1.5 ohm on-resistance |
onsemi |
8,035 |
|
SF20LC30
|
TO-220AB Diode with 3 Pins |
shindengen |
8,990 |
|
SF20L60U
|
With a voltage handling capability of 600V and a current capacity of 20A, SF20L60U is a diode packaged in the 2-pin FTO-220 configuration |
shindengen |
6,846 |
|
SF10LC40
|
Diode with Low Loss for Rectifiers |
shindengen |
8,773 |
|
IPA60R600C6
|
Power Field-Effect Transistor IPA60R600C6: 7.3A I(D), 600V, 0.6ohm, N-Channel, Silicon MOSFET, TO-220AB, 3 PIN |
INFINEON |
3,853 |
|
IPA60R125C6
|
Manufactured by Infineon |
INFINEON |
5,928 |
|
IPA60R280C6
|
600V 13.8A TO220FP-3 N-Channel MOSFET CoolMOS C6 |
INFINEON |
5,622 |
|
D10L20U
|
Silicon Rectifier Diode, 1 Phase, 1 Element, TO-220AC Package, 10A, 200V V(RRM) |
shindengen |
5,214 |
|
2SK3707
|
Drive Series for N-Channel MOSFETs with 4V |
onsemi |
9,542 |
|
2SK3568(Q)
|
Low on-resistance of 0.52 Ohm |
toshiba |
9,198 |
|
2SA1931(Q)
|
A 3-pin (3+Tab) configuration houses this Bipolar Junction Transistor (BJT) |
toshiba |
6,426 |
|
IKA15N65ET6
|
IKA15N65ET6 TO-220-3 IGBTs with ROHS compliance |
infineon |
6,371 |
|
IKA08N65F5
|
Description of IKA08N65F5, a TO-220-3 IGBTs ROHS |
Infineon Technologies |
5,185 |
|
IKA10N65ET6
|
IKA10N65ET6 TO-220-3 IGBTs, adhering to ROHS directives |
infineon |
6,223 |
|
STP5NB100FP
|
STP5NB100FP is a high-voltage N-channel MOSFET designed for power applications |
stmicroelectronics |
7,553 |
|
STP4NC60FP
|
2.2ohm On-Resistance |
stmicroelectronics |
7,958 |
|
STP4NB80FP
|
Power MOSFET with N-channel configuration, capable of handling 4A current and 800V voltage, housed in TO-220FP package |
STMicroelectronics |
6,596 |
|
STP36NE06FP
|
The STP36NE06FP is an N-CHANNEL Si POWER MOSFET with a current capacity of 20A and a voltage rating of 60V |
stmicroelectronics |
9,712 |
|
STP16NE06FP
|
CHANNEL POWER MOSFET, 11A, 60V, 0.1ohm |
stmicroelectronics |
6,637 |
|
SF20L60U-7600
|
Described as a 20A diode switch, SF20L60U-7600 is engineered with a 2-pin (2+tab) arrangement, housed in the FTO-220 package |
shindengen |
5,609 |
|