|
DSI45-08A
|
DSI45 Series 800 Vrrm 48 A 1.18 Vf Single Diode Rectifier - TO-247AD |
IXYS |
6,928 |
|
|
FFSH3065B-F085
|
Diode Schottky SiC 650V 37A Automotive AEC-Q101 2-Pin(2+Tab) TO-247 Tube |
onsemi |
5,603 |
|
|
GC50MPS33H
|
Silicon Carbide Schottky Diode |
GeneSiC Semiconductor |
9,297 |
|
|
GP2D005A170B
|
Diode 1700 V 5A Through Hole TO-247-2 |
SemiQ |
7,052 |
|
|
ISL9R3060G2
|
Rectifier Diode Switching 600V 30A 45ns 2-Pin(2+Tab) TO-247 Tube |
onsemi |
8,325 |
|
|
ISL9R30120G2
|
Rectifier Diode Switching 1.2KV 30A 100ns 2-Pin(2+Tab) TO-247 Tube |
onsemi |
8,575 |
|
|
RURG80100
|
Rectifier Diode Switching 1KV 80A 200ns 2-Pin(2+Tab) TO-247 Tube |
onsemi |
6,370 |
|
|
UJ3D1250K2
|
TO-247-2L Schottky Diode with 1200V and 50A forward current capabilities |
Qorvo |
5,188 |
|
|
DPG30I400HA
|
Rectifier Diode Switching 400V 30A 45ns 2-Pin(2+Tab) TO-247 Tube |
IXYS |
8,511 |
|
|
RHRG3060
|
General Purpose Diodes |
Onsemi |
5,884 |
|
|
RHRG75120
|
Rectifier Diode Switching 1.2KV 75A 100ns 2-Pin(2+Tab) TO-247 Tube |
Onsemi |
6,443 |
|
|
IDWD40G120C5XKSA1
|
Power electronics devices |
Infineon |
5,077 |
|
|
APT60DQ60BG
|
High voltage and high current diode |
Microchip Technology |
8,856 |
|
|
APT75DQ60BG
|
Diode Switching 600V 75A 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
7,105 |
|
|
APT30DQ120BG
|
Diode Switching 1.2KV 30A 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
9,235 |
|
|
APT30D60BHBG
|
General purpose diode array capable of handling up to 1200V and 28A in TO247AD housing |
Microchip |
6,164 |
|
|
APT30D60BG
|
Gas Plasma Arrestors T90-A350XSMD |
Microchip |
8,171 |
|
|
APT30D120BG
|
Diode Switching 1.2KV 30A TO-247 2-Pin(2+Tab) |
Microchip |
6,700 |
|
|
APT60D60BG
|
TO-247 Tube 600V 60A 130ns Switching Rectifier Diode 2-Pin(2+Tab) |
Microchip |
3,719 |
|
|
APT60DQ120BG
|
Rectifier Diode Switching 1.2KV 60A 320ns 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
6,227 |
|
|
APT40DQ120BG
|
Diode Switching 1.2KV 40A 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
7,032 |
|
|
MSC030SDA120B
|
Rectifier Diode Schottky SiC 1.2KV 65A 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
8,269 |
|
|
APT100S20BG
|
Rectifier Diode Schottky 200V 120A 110ns 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
9,191 |
|
|
APT30S20BG
|
Rectifier Diode Schottky 200V 45A 55ns 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
8,759 |
|
|
APT60S20BG
|
Rectifier Diode Schottky 200V 75A 55ns 2-Pin(2+Tab) TO-247 Tube |
Microchip Technology |
6,594 |
|
|
UJ3D1725K2
|
ROHS-certified Schottky Barrier Diodes (SBD) housed in TO-247-2 packaging, designed for applications requiring a voltage rating of 1 |
Qorvo |
8,808 |
|
|
RFS60TZ6SGC13
|
60A TO-247GE Switching Diode: 650V, 55ns Fast Switching Time |
Rohm Semiconductor |
8,894 |
|
|
C5D10170H
|
Schottky SiC diode with a voltage rating of 1.7KV and a current capacity of 33A, housed in a TO-247 package |
Wolfspeed, Inc. |
6,760 |
|
|
C5D05170H
|
1.7KV 18A Schottky SiC Diode in TO-247 Housing |
Wolfspeed, Inc. |
6,797 |
|
|
C4D40120H
|
Schottky diode utilizing silicon carbide technology, capable of handling up to 1.2KV and 128A, housed in a TO-247 package with 2 pins and 2 tabs |
Wolfspeed, Inc. |
8,824 |
|
|
GD60MPS17H
|
Schottky Diode made of Silicon Carbide |
GeneSiC Semiconductor |
7,723 |
|
|
VS-60EPF12PBF
|
TO-247AC packaging with 2 pins and tabs for easy mounting |
VISHAY |
7,509 |
|
|
RHRG50120
|
50A 100ns 2-Pin(2+Tab) TO-247 Rectifier Diode Switching |
onsemi |
9,620 |
|
|
LTO100F100R0FTE3
|
Thick film resistor with high accuracy and power handling |
Vishay |
6,752 |
|
|
LTO100F680R0JTE3
|
Resistive element with ±150ppm/°C stability for precision control |
Vishay |
5,771 |
|
|
LTO100F10R00JTE3
|
Precision resistor for automotive application |
Vishay |
7,998 |
|
|
LTO100FR0500JTE3
|
Robust 0R05 ohm value for precise circuit regulation |
Vishay |
8,268 |
|
|
HFA08PB60
|
Description of HFA08PB60 |
Vishay General Semiconductor - Diodes Division |
6,109 |
|
|
HFA25PB60PBF
|
TO-247AC Modified Tube 25A Diode Switching |
Vishay General Semiconductor - Diodes Division |
6,226 |
|
|
HFA08PB120
|
Recommended alternative for HFA08PB120 |
Vishay General Semiconductor - Diodes Division |
6,132 |
|
|
APT10SCD120B
|
Schottky Diode, 1.2KV, 37A, TO-247 Package |
Microsemi Corporation |
9,716 |
|
|
APT30SCD120B
|
Product APT30SCD120B, also known as MSWAPT30SCD120B, is a cutting-edge technological solution designed to meet industry demands |
Microsemi Corporation |
8,852 |
|
|
60EPF06PBF
|
Rectifier diode with 1 phase and 1 element, 60A and 600V V(RRM) |
Vishay General Semiconductor - Diodes Division |
8,902 |
|
|
60EPU06
|
Recommended alternative for 60EPU06 rectifiers |
Vishay General Semiconductor - Diodes Division |
5,970 |
|
|
60EPF12
|
Rectifier Diode Switching 1.2KV 60A 480ns 2-Pin(2+Tab) TO-247AC Modified |
Vishay General Semiconductor - Diodes Division |
8,163 |
|
|
60EPU02
|
Rectifiers preferred substitute 844-60EPU02PBF |
Vishay General Semiconductor - Diodes Division |
7,339 |
|
|
60EPS08
|
Detailed information about product 60EPS08, with the recommended alternative listed as 844-60EPS08PBF, can be found below |
Vishay General Semiconductor - Diodes Division |
8,331 |
|
|
40EPF06
|
2-Pin TO-247AC 40EPF06 |
Vishay General Semiconductor - Diodes Division |
5,143 |
|
|
40EPF02
|
TO-247AC Modified Rectifier Diode Switching 40A 180ns 2-Pin(2+Tab) |
Vishay General Semiconductor - Diodes Division |
9,480 |
|
|
40EPF04
|
Recommended Alternates |
Vishay General Semiconductor - Diodes Division |
6,593 |
|
