|
IRFM450
|
Hermetically sealed power MOSFET |
infineon |
5,766 |
|
|
IRFM460
|
500V Single N-Channel Hi-Rel MOSFET |
Infineon |
7,447 |
|
|
IRHM9260
|
27A Power FET, 200V Voltage Rating, 0.16ohm Resistance, Single Channel Design, P-Type Silicon, TO-254AA Package |
Infineon |
8,827 |
|
|
IRF5M4905
|
3-Pin (3+Tab) Transistor for Power Applications with 55V Maximum Voltage and 35A Maximum Current |
Infineon |
5,559 |
|
|
12CGQ150
|
Rectifier Diode Schottky 35A 150V TO-254AA |
infineon |
8,663 |
|
|
IRFM064
|
MOSFET Transistor, N-Channel, TO-254AA |
infineon |
7,945 |
|
|
IRFM054
|
60V N-Channel 35A Power MOSFET |
infineon |
5,025 |
|
|
IRFM360
|
channel design, high voltage handling |
infineon |
5,502 |
|
|
IRHM9150
|
High power P-Channel MOSFET capable of handling up to 22A of current at 100V |
infineon |
6,206 |
|
|
IRF5M5210
|
254AA Package for -100V Single P-Channel Hi-Rel MOSFET |
infineon |
7,708 |
|
|
HFB35HB20C
|
3-Pin Diode Switching TO-254AA 200V 35A |
Infineon Technologies AG |
5,932 |
|
|
JANSR2N7425
|
100 krad(Si) TID |
infineon |
7,930 |
|
|
JANSR2N7424
|
P-channel MOSFET transistor for power applications with 60V rating and 35A current handling capability in a TO-254AA package |
infineon |
5,835 |
|
|
IRFM9140
|
A Hermetically Sealed IRFM9140 MOSFET with -100V Voltage Rating |
infineon |
6,929 |
|
|
IRFM350
|
Hermetic Packaging Benefits |
infineon |
8,289 |
|
|
IRFM150
|
In TO-254AA packaging, the IRFM150 is a N-Channel MOSFET Transistor |
infineon |
5,554 |
|
|
IRFM140
|
Power FET with 28A current rating and 100V voltage rating |
Infineon Technologies AG |
6,912 |
|
|
IRF5M3710
|
TO-254AA N-Channel Silicon Transistor MOSFET 100V 35A 3-Pin |
infineon |
7,072 |
|
|
HFB35HB20
|
5HB20 200V 35A Hi-Rel ultra-fast discrete diode TO-254AA |
International Rectifier |
9,013 |
|
|
HFA35HB60C
|
HFA35HB60C, a rectifier diode optimized for switching duties, supports currents up to 30A and exhibits a rapid response time of 88ns |
Infineon Technologies AG |
5,312 |
|
|
HFA35HB60
|
Hi-Rel Ultra-Fast Discrete Diode with 600V and 22A in a TO-254AA package |
Infineon Technologies AG |
9,474 |
|
|
35CGQ150
|
TO-254AA Schottky rectifier diode 150V 35A |
Infineon Technologies AG |
5,937 |
|
|
35CGQ100
|
100V 35A Schottky Diode |
infineon |
8,334 |
|
|
22GQ100
|
The 22GQ100 is a 100V Schottky diode designed to handle currents up to 30A, housed in a TO-254AA package with 3 pins and a tab |
Infineon Technologies AG |
7,672 |
|
|
IRHM9160
|
TO-257AA P-Channel MOSFET |
INFINEON |
5,969 |
|
|
15CGQ100
|
5A 100V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package |
INFINEON |
7,639 |
|
|
JANTX2N7225
|
High Power N-Channel MOSFET Transistor with 200V Voltage Limit |
Infineon |
5,774 |
|
|
IRFM260
|
Trans MOSFET N-CH 200V 35A 3-Pin(3+Tab) TO-254AA |
tt electronics |
6,997 |
|
|
IRFM250
|
Single N-Channel 200 V 100 mOhm 115 nC 150 W Power Transistor TO-254AA |
infineon |
6,978 |
|
|
JANTX2N7228
|
TO-254AA packaged JANTX2N7228: Offering high voltage capabilities and reliability |
Infineon |
6,012 |
|
