|
IXTA10P50P
|
Ready to Ship within 1 Day |
IXYS |
7,619 |
|
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STB100N10F7
|
The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design |
STMicroelectronics |
7,535 |
|
|
IRF2807ZS
|
N-Channel Power Field-Effect Transistor with 75A I(D) |
Infineon Technologies |
9,546 |
|
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IPB072N15N3G
|
7.2mΩ at 10V, 100A and 4V at 270uA |
Infineon Technologies |
8,926 |
|
|
IPB027N10N5
|
Robust and durable component for demanding industrial power systems |
INFINEON |
4,912 |
|
|
SPB11N60C3
|
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R |
INFINEON |
7,146 |
|
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AUIRF5210STRL
|
The AUIRF5210STRL MOSFET is suitable for automotive applications due to its high current handling capabilities and low on-resistance |
Infineon Technologies |
7,962 |
|
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AUIRF6215STRL
|
This MOSFET is compliant with ROHS regulations, ensuring environmental friendliness |
Infineon Technologies |
6,583 |
|
|
AUIRF6218STRL
|
This MOSFET is ideal for use in automotive systems due to its high-current handling and low gate charge |
Infineon Technologies |
8,634 |
|
|
AUIRFS3107TRL
|
Automotive Grade N-Channel Silicon MOSFET capable of 230A Current and 75V Voltage Operation |
Infineon Technologies |
9,945 |
|
|
AUIRFS4410Z
|
100V, 97A automotive MOSFET with a low 9mOhm on-resistance for efficient power management |
International Rectifier |
8,285 |
|
|
AUIRLS4030
|
MOSFET with a voltage rating of 100V, current handling capacity of 180A, and a low on-state resistance of 4 |
Infineon Technologies |
9,411 |
|
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BUB941ZTT4
|
TO-263AB Plastic/Epoxy Power Bipolar Transistor: NPN Silicon, 15A I(C), 350V V(BR)CEO |
STMicroelectronics |
9,220 |
|
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DPG30C300PC
|
Rectifier Diode Switching 300V 15A 35ns 3-Pin(2+Tab) D2PAK T/R |
IXYS |
3,854 |
|
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FCB290N80
|
Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) D2PAK T/R |
onsemi |
5,863 |
|
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FDB024N06
|
Trans MOSFET N-CH Si 60V 265A 3-Pin(2+Tab) D2PAK T/R |
onsemi |
7,114 |
|
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FDB088N08
|
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R |
onsemi |
6,793 |
|
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FDB28N30TM
|
Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R |
onsemi |
6,312 |
|
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FDB2710
|
Trans MOSFET N-CH 250V 50A 3-Pin(2+Tab) D2PAK T/R |
onsemi |
8,127 |
|
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FDB3682
|
Trans MOSFET N-CH 100V 6A 3-Pin(2+Tab) D2PAK T/R |
onsemi |
6,920 |
|
|
FDB3652
|
Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) D2PAK T/R |
onsemi |
5,265 |
|
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FDB42AN15A0
|
TO-263 150V 150W MOSFET |
Onsemi |
5,664 |
|
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IPB042N10N3GATMA1
|
MOSFET N-Ch 100V 100A D2PAK -2 OptiMOS 3 |
Infineon Technologies |
6,263 |
|
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IPB048N15N5ATMA1
|
Trench-Type MOSFET Designed for Voltage Levels Exceeding 100V |
INFINEON |
8,458 |
|
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IPB072N15N3GATMA1
|
Trans MOSFET N-CH 150V 100A 3-Pin(2+Tab) D2PAK T/R |
Infineon |
5,787 |
|
|
IRF1018ESPBF
|
Transistor MOSFET in N-channel configuration with a voltage rating of 60V and a current rating of 79A, packaged in a 3-pin D2PAK tube |
Infineon Technologies |
6,717 |
|
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IRFS4410ZPBF
|
N-channel Si Transistor with 100V Voltage Rating and 97A Current Rating |
Infineon Technologies |
9,027 |
|
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IRFS3607PBF
|
D2-PAK INFINEON N-channel MOSFET IRFS3607PBF |
Infineon Technologies |
7,149 |
|
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IRFS4229TRLPBF
|
MOSFET MOSFT 250V 45A 48mOhm 72nC Qg |
Infineon Technologies |
6,779 |
|
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IRFS4410PBF
|
Channel MOSFET Transistor Infineon IRFS4410PBF |
Infineon Technologies |
8,131 |
|
|
IRFS4310TRLPBF
|
Infineon IRFS4310TRLPBF N-channel MOSFET, 130 A, 100 V HEXFET, 3-Pin D2PAK |
Infineon Technologies |
8,117 |
|
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IRFS4410ZTRLPBF
|
MOSFET N-Channel HEXFET 100V 97A D2PAK Infineon IRFS4410ZTRLPBF N-channel MOSFET Transistor, 97 A, 100 V, 3+Tab-Pin D2PAK |
Infineon Technologies |
8,271 |
|
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IRFS4620PBF
|
MOSFET 200V 1 N-CH HEXFET 78mOhms 25nC |
Infineon Technologies |
6,486 |
|
|
IRFS52N15DPBF
|
Transistor MOSFET for N-channel operation at 150V and 51A in a D2PAK package |
Infineon Technologies |
8,524 |
|
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IRFS7437TRLPBF
|
Trans MOSFET N-CH Si 40V 250A 3-Pin(2+Tab) D2PAK T/R |
Infineon Technologies |
6,328 |
|
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IRFS7440TRLPBF
|
Transistor MOSFET with N-channel, 40V voltage rating, 208A current rating, in D2PAK package |
Infineon Technologies |
8,497 |
|
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IRL60S216
|
ROHS Compliant Transistors |
Infineon Technologies |
5,840 |
|
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IRLZ34NSTRLPBF
|
3+Tab-Pin configuration |
Infineon Technologies |
9,846 |
|
|
FQB25N33
|
ROHS COMPLIANT 330V N-Channel Silicon Metal-oxide Semiconductor FET, with 25A I(D), 0.23ohm, packaged in D2PAK with 8 pins |
Onsemi |
5,453 |
|
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FQB1P50
|
This Power MOSFET is designed for P-Channel operation with QFET technology |
Onsemi |
6,559 |
|
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HUF75639S3S
|
Power MOSFET designed for high-performance applications, delivering 56 amps of current handling capability |
Fairchild Semiconductor |
9,467 |
|
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IPB020N10N5LFATMA1
|
Low RDS(on) and wide safe operating area in PG-TO263-3 package, RoHS compliant |
Infineon Technologies |
8,930 |
|
|
IPB073N15N5ATMA1
|
This device is an N-Channel MOSFET designed to handle voltages up to 150 volts and currents up to 114 amperes at a continuous basis |
Infineon Technologies |
6,252 |
|
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IPB100N10S3-05
|
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) D2PAK T/R |
INFINEON |
3,842 |
|
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IPB107N20N3GATMA1
|
N-Channel MOSFET suitable for high power applications with a 200V rating |
Infineon Technologies |
7,612 |
|
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IPB117N20NFDATMA1
|
Transistor MOSFET N-channel with 200V voltage rating and 84A current rating in D2PAK package |
Infineon Technologies |
6,977 |
|
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IPB120P04P404ATMA2
|
The TO-263 package design allows for high power dissipation of up to 136W |
Infineon Technologies |
5,374 |
|
|
IPB320N20N3GATMA1
|
N-type metal-oxide-semiconductor field-effect transistor with a 200V voltage limit and 34A current capability, housed in a 3-pin D2PAK package |
Infineon Technologies |
5,438 |
|
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IPB60R080P7ATMA1
|
This INFINEON MOSFET, model IPB60R080P7ATMA1, is a high voltage N-channel device capable of handling up to 600V and 37A |
Infineon Technologies |
9,825 |
|
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IPB60R040CFD7ATMA1
|
edge semiconductor |
INFINEON |
6,459 |
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