|
AUIRGPS4070D0
|
SUPER247-3COPAK |
International Rectifier |
7,598 |
|
|
IRGPS66160DPBF
|
Insulated Gate Bipolar Transistor |
Infineon Technologies |
8,768 |
|
|
VS-70TPS12PBF
|
Thyristor SCR 70A 1.2KV Super-247 Vishay, VS-70TPS12PBF, Thyristor, 1200V 70A, 100mA 3-Pin, Super-247 |
Vishay General Semiconductor - Diodes Division |
7,933 |
|
|
IRFPS40N60K
|
IRFPS40N60KPBF alternative |
Vishay Siliconix |
8,758 |
|
|
IRFPS43N50K
|
247 3-Pin N-Channel MOSFET, rated at 500V and 47A |
Vishay Siliconix |
8,336 |
|
|
IRFPS38N60L
|
MOSFET N-CHANNEL 600V |
Vishay Siliconix |
8,629 |
|
|
IRG4PSH71KD
|
N-Channel Insulated Gate Bipolar Transistor |
Infineon Technologies |
8,741 |
|
|
IRG4PSC71K
|
Power Semiconductor Component for Circuit Design |
Infineon Technologies |
9,496 |
|
|
IRFPS40N60KPBF
|
MOSFET N-CH 600V HEXFET MOSFET |
Vishay Siliconix |
5,864 |
|
|
IRFPS43N50KPBF
|
N-channel MOSFET,IRFPS43N50K 47A 500V |
Vishay Siliconix |
7,445 |
|
|
IRFPS3810
|
A high-performance semiconductor device, the IRFPS3810 is a Power Field-Effect Transistor |
Infineon Technologies |
9,564 |
|
|
70TPS16
|
Recommended Replacement: 844-70TPS16PBF |
Vishay General Semiconductor - Diodes Division |
9,232 |
|
|
IRG7PSH50UDPBF
|
RoHS-compliant 462W 116A IGBTs in TO-274AA package |
International Rectifier |
5,134 |
|
|
IRG4PSH71KDPBF
|
High power IGBT |
International Rectifier |
5,306 |
|
|
IRG4PSC71UPBF
|
Trans IGBT Chip N-Channel 600V 85A 350W 3-Pin TO-274AA Tube |
Infineon Technologies |
8,843 |
|
|
IRGPS60B120KDP
|
IRGPS60B120KDP is a high-power N-channel IGBT chip designed for efficient switching applications |
Infineon Technologies |
7,001 |
|
|
IRGPS40B120UPBF
|
Transistor IGBT Chip for N-Channel with 1200V and 80A ratings |
International Rectifier |
9,125 |
|
|
IRG4PSH71UD
|
TO-274AA Package |
Infineon Technologies |
9,429 |
|
|
IRG4PSH71U
|
High Voltage Power Switching Device |
Infineon Technologies |
6,135 |
|
|
IRG4PSC71KDPBF
|
Transistor IGBT Chip with N-Channel, 600V, 85A, 350W, 3-Pin TO-274AA Tube |
Infineon Technologies |
5,712 |
|
|
IRG4PSC71KD
|
Through Hole IGBT rated at 600 Volts, 85 Amps, and 350 Watts |
Infineon Technologies |
5,537 |
|
|
IRGPS60B120KD
|
IRGPS60B120KD: Insulated Gate Bipolar Transistor featuring a maximum current of 105A and a breakdown voltage of 1200V |
Infineon Technologies AG |
6,344 |
|
|
IRGPS40B120UD
|
IRGPS40B120UD by Infineon: IGBT with 80A and 1200V ratings in Super-247 package |
Infineon Technologies AG |
8,970 |
|
|
IRG4PSC71UDPBF
|
Trans IGBT Chip N-CH 600V 85A 350W 3-Pin(3+Tab) TO-274AA Tube |
Infineon Technologies |
6,427 |
|
