2N2222AUATXV
Trans GP BJT NPN 50V 0.8A 500mW 4-Pin CSMD Waffle
在庫:5,414
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : 2N2222AUATXV
-
パッケージ/ケース : TO-18-3
-
ブランド : TT ELECTRONICS
-
コンポーネントの分類 : Single Bipolar Transistors
-
日付シート : 2N2222AUATXV データシート (PDF)
概要 2N2222AUATXV
Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Surface Mount 4-CLCC (5.59x3.81)
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | TT Electronics | Product Category | Bipolar Transistors - BJT |
Mounting Style | Through Hole | Package / Case | TO-18-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 40 V | Collector- Base Voltage VCBO | 75 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 1 V |
Pd - Power Dissipation | 500 mW | Gain Bandwidth Product fT | 300 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Brand | Optek / TT Electronics | Continuous Collector Current | 800 mA |
DC Collector/Base Gain hfe Min | 100 at 150 mA, 10 V | DC Current Gain hFE Max | 300 at 150 mA, 10 V |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 120 |
Subcategory | Transistors | Technology | Si |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![2N6849](/files/uploads/product/s/e87ff388145a4fdeb8ac507ab9649e59.webp)
2N6849
Advanced P-channel design delivers exceptional voltage handling capabilities and spee
![2N2907ACSM](/img/package/to-3.jpg)
2N2907ACSM
Description of Product 2N2907ACSM: Bipolar transistors engineered for high performance in various electronic applications
![2N2222AUATX](/img/package/to-3.jpg)
2N2222AUATX
Simple switching circuit for basic control syste
![2N6849](/files/uploads/product/s/e87ff388145a4fdeb8ac507ab9649e59.webp)
2N6849
Advanced P-channel design delivers exceptional voltage handling capabilities and spee
![2N2907ACSM](/img/package/to-3.jpg)
2N2907ACSM
Description of Product 2N2907ACSM: Bipolar transistors engineered for high performance in various electronic applications
![2N2222AUATX](/img/package/to-3.jpg)
2N2222AUATX
Simple switching circuit for basic control syste
![2SA733P](/img/package/to92.jpg)
2SA733P
TO-92 100 mA 50 V PNP silicon small signal transistor
![IRF6215STRLPBF](/img/package/d2pak3.jpg)
IRF6215STRLPBF
MOSFET transistor designed for P-Channel operation
![BCP56TA](/img/package/sot223.jpg)
BCP56TA
NPN medium power transistor in SOT223 package
![IRFHM9391TRPBF](/img/package/pqfn8.jpg)
IRFHM9391TRPBF
Single P-Channel HEXFET Technology MOSFET for Power Applications at 30V
![IRLR7821TRPBF](/img/package/to252.jpg)
IRLR7821TRPBF
TO-251AA Packaged Silicon Power FET with 65A Continuous Drain Current
![SBC856BLT1G](/img/package/sot23.jpg)
SBC856BLT1G
Digital Signal Transistor"
![ACS102-5T1](/img/package/soic8.jpg)
ACS102-5T1
500V TRIAC diode capable of handling currents up to 0.2A RMS, enclosed in an 8-pin SO N Tube casing
![UJ3C065080T3S](/img/package/to220.jpg)
UJ3C065080T3S
650V rated SiC transistor featuring N-JFET and N-MOSFET design, unipolar operation, cascode configuration, capable of handling 23A current
![VS-20MT120UFP](/img/package/module.jpg)
VS-20MT120UFP
1200V 40A IGBT Module with 240W Power Rating
![2SK1317-E](/img/package/to-3.jpg)
2SK1317-E
Ideal for use in switching circuits that require high performance