2N3055A
Bipolar Junction Transistor NPN Type TO-3
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.351 | $1.35 |
| 10 | $1.140 | $11.40 |
| 30 | $1.026 | $30.78 |
| 100 | $0.893 | $89.30 |
| 500 | $0.837 | $418.50 |
| 1000 | $0.810 | $810.00 |
在庫：5,453
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : 2N3055A
-
パッケージ/ケース : TO-204-2
-
ブランド : onsemi
-
コンポーネントの分類 : Single Bipolar Transistors
-
日付シート : 2N3055A データシート (PDF)
-
Series : 2N3055A
概要 2N3055A
Whether you are looking to build a dc-to-dc converter, an inverter, or any other power control system, the 2N3055A transistor is a reliable choice that can handle the task with ease. Its robust construction and high power capabilities ensure long-lasting performance in a variety of applications
主な特長
- High current gain
- Wide frequency response
- Compliant with RoHS directive
- Rated for 50V and 100V
- Pb-free lead free reflow solderable
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | Bipolar Transistors - BJT | RoHS | N |
| Mounting Style | Through Hole | Package / Case | TO-204-2 |
| Transistor Polarity | NPN | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 60 V | Collector- Base Voltage VCBO | 200 V |
| Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 1.1 V |
| Maximum DC Collector Current | 15 A | Pd - Power Dissipation | 115 W |
| Gain Bandwidth Product fT | 6 MHz | Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C | Brand | onsemi |
| Continuous Collector Current | 15 A | Height | 8.51 mm |
| Length | 39.37 mm | Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 100 | Subcategory | Transistors |
| Technology | Si | Width | 26.67 mm |
| Unit Weight | 0.056438 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
2N5886
Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
HGTG12N60A4D
Low power dissipation
2N7002W
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-323 T/R
JANTX2N2907A
JANTX2N2907A is a type of Bipolar Junction Transistor (BJT) specifically designed for small-signal applications
JANTX2N6284
NPN Darlington transistor
BSC022N04LS6ATMA1
High power switching component
BSC052N08NS5ATMA1
80V 95A N-channel Trans MOSFET for Automotive Applications, 8-Pin TDSON EP Package
BSC072N08NS5ATMA1
N-type MOSFET designed for power applications, rated at 80V with a maximum current of 74A, presented in TDSON-8 package
FDPF12N60NZ
20FP Transistor 240W
IPB042N10N3GATMA1
MOSFET N-Ch 100V 100A D2PAK -2 OptiMOS 3
IRFZ48NPBF
Transistor with N-MOSFET technology, capable of handling up to 55V and 64A, in a TO220AB package with a power rating of 94W
TIM8596-15
High-frequency amplifier for X-band applications, offering reliable performance and hermetic sealin
DMN63D8LW-13
Enhancement Mode N-Channel MOSFET featuring 30V VDS and 20±V VGS
BSM15GP60
The BSM15GP60 module is a high-performance IGBT solution with a voltage rating of 600V and a current handling capability of 15A
IRGB20B60PD1PBF
Trans IGBT Chip N-CH 600V 40A 215000mW 3-Pin(3+Tab) TO-220AB Tube
STGB3NC120HDT4
N-channel IGBT chip designed for high-voltage operations, capable of handling up to 1200V and 14A
TN0604N3-G
N-Channel MOSFET operating in enhancement mode, suitable for 40V with 0.75 Ohm resistance
DMMT3904W-7-F
Diodes Inc DMMT3904W-7-F Dual NPN Bipolar Transistor, 200 mA, 40 V, 6-Pin SOT-363
AOTF4185
40V 34A P-Channel Transistor in TO-220F Tube
BSM200GD60DLC
ECONO Insulated Gate Bipolar Transistor, 226A I(C), 600V V(BR)CES, N-Channel, 39 PIN"