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2SA2061

General-purpose PNP transistor with high current handling capacity for applications requiring precision control and reliable operatio

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見積もりリクエストを送信してください 2SA2061 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 2SA2061

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications• High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.)

TOSHIBA Inventory

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid 2SA2061 Pbfree Code No
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code
ECCN Code EAR99 Collector Current-Max (IC) 2.5 A
Collector-Emitter Voltage-Max 20 V Configuration SINGLE
DC Current Gain-Min (hFE) 100 JESD-30 Code R-PDSO-G3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 1 W Qualification Status Not Qualified
Surface Mount YES Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Manufacturer Toshiba Product Category Bipolar Transistors - BJT
Mounting Style SMD/SMT Package / Case 2-3S1C-3
Transistor Polarity PNP Collector- Emitter Voltage VCEO Max 20 V
Collector- Base Voltage VCBO 20 V Emitter- Base Voltage VEBO 7 V
Collector-Emitter Saturation Voltage 1.1 V Maximum DC Collector Current 4 A
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series 2SA Brand Toshiba
Continuous Collector Current - 2.5 A DC Collector/Base Gain hfe Min 200
DC Current Gain hFE Max 500 Product Type BJTs - Bipolar Transistors
Subcategory Transistors

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    部品の品質保証: 365 日

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