2SA2222SG
TO-220F-3FS Package
在庫:9,501
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : 2SA2222SG
-
パッケージ/ケース : TO-220F-3
-
Brand : Onsemi
-
Components Classification : Single Bipolar Transistors
-
日付シート : 2SA2222SG データシート (PDF)
-
Series : 2SA2222SG
概要 2SA2222SG
2SA2222SG is Bipolar Transistor, -50V, -10A, Low VCE(sat), PNP TO-220F-3FS for High-Current Switching Applications.
主な特長
- Adoption of MBIT process
- Low input capacitance (6pF typ)
- High breakdown voltage (600V typ)
- Fast switching time (12 ns typ)
- High sensitivity (0.8 A/V typ)
- Pin-compatible with similar devices
応用
- Valve Drivers
- Encoder Drivers
- Display Drivers
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | Bipolar Transistors - BJT | RoHS | Details |
REACH | Details | Mounting Style | Through Hole |
Package / Case | TO-220F-3 | Transistor Polarity | PNP |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 50 V |
Collector- Base Voltage VCBO | 50 V | Emitter- Base Voltage VEBO | 6 V |
Collector-Emitter Saturation Voltage | 250 mV | Maximum DC Collector Current | 10 A |
Pd - Power Dissipation | 25 W | Gain Bandwidth Product fT | 230 MHz |
Maximum Operating Temperature | + 150 C | Series | 2SA2222SG |
Brand | onsemi | Continuous Collector Current | - 10 A |
DC Collector/Base Gain hfe Min | 150 | DC Current Gain hFE Max | 450 |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 50 |
Subcategory | Transistors | Technology | Si |
Unit Weight | 0.010582 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![2SC4135T-E](/files/uploads/product/s/45ebffa15de84476bbccaf1518145409.webp)
2SC4135T-E
PNP-NPN Single TP/TP-FA Bipolar Transistor optimized for high-voltage switching, featuring a voltage rating of -100V and a current rating of -2A
![FDMS7602S](/img/package/dfn.jpg)
FDMS7602S
Trans MOSFET N-CH Si 30V 12A/17A 8-Pin DFN EP T/R
![FDMS8672S](/img/package/power33.jpg)
FDMS8672S
With its compact PQFN-8(5x6) package, the FDMS8672S MOSFET provides space-saving solutions without compromising on performance or reliability
![IPP60R022S7XKSA1](/img/package/to220.jpg)
IPP60R022S7XKSA1
N-channel 600V 23A Trans MOSFET in tube packaging
![2STR1230](/img/package/sot23.jpg)
2STR1230
00mW Small Signal Transistor
![2STF2550](/img/package/sot893.jpg)
2STF2550
Bipolar Transistors - BJT LV high performance PNP power transistor
![2STC5949](/img/package/to-3.jpg)
2STC5949
Efficient NPN power device for power control and amplificatio
![2ST501T](/img/package/to220.jpg)
2ST501T
Darlington Transistors for Power Bipolar and Solid-State Signal Amplification"
![2ST2121](/img/package/to-3.jpg)
2ST2121
17A silicon PNP power transistor
![2SK3666-3-TB-E](/img/package/sot23.jpg)
2SK3666-3-TB-E
N-channel Junction Field-Effect Transistor (JFET) with a voltage rating of 30V and a maximum current of 10mA in a 3-pin SC-59 package
![MAC4DLMT4G](/img/package/dpak.jpg)
MAC4DLMT4G
600V, 40A Triac in DPAK package with 3 pins
![SI9410DY](/img/package/soic8.jpg)
SI9410DY
Small signal field-effect transistor with N-channel configuration and 1-element design
![IRF540NLPBF](/img/package/to262.jpg)
IRF540NLPBF
IRF540NLPBF is a planar MOSFET designed for applications requiring a minimum voltage of 100V
![SIRA20DP-T1-RE3](/img/package/power33.jpg)
SIRA20DP-T1-RE3
VISHAY - SIRA20DP-T1-RE3 - MOSFET, N-CH, 25V, 100A, POWERPAK SO
![BC857BDW1T1](/img/package/sc70.jpg)
BC857BDW1T1
PNP Transistor with 45V Voltage Rating and 0.1A Current Rating
![APT5010JN](/img/package/sot.jpg)
APT5010JN
APT5010JN POWER MOSFET TRANSISTOR
![2SJ74BL](/img/package/to92.jpg)
2SJ74BL
SJ74-BL transistor
![PSMN4R0-40YS,115](/img/package/sot669.jpg)
PSMN4R0-40YS,115
MOSFET N-CH 40V 4.2 mOhm Standard MOSFET
![T2800DG](/img/package/to220.jpg)
T2800DG
Advanced TRIACs for specialized THY systems
![FZ1200R17KF6C_B2](/img/product.png)
FZ1200R17KF6C_B2
N-Channel Insulated Gate Bipolar Transistor housed in MODULE-7 packaging, capable of handling currents up to 2600A and voltages up to 1700V