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2SD1980TL

Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SC-63, 3 PIN

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迅速な見積もり

見積もりリクエストを送信してください 2SD1980TL このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 2SD1980TL

With the 2SD1980TL NPN High gain amplifier transistor, you can expect nothing but the best in terms of quality and innovation. Its focus on energy-saving and high reliability sets it apart from the competition, making it a top choice for professionals and enthusiasts alike. Whether you need a compact solution or a more powerful option, this transistor has the versatility to meet your demands

主な特長

  • 1) Darlington connection for high DC current gain.
  • 2) Built-in resistor between base and emitter.
  • 3) Built-in damper diode.
  • 4) Complements the 2SB1580 / 2SB1316.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer ROHM CO LTD
Part Package Code SC-63 Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3 Reach Compliance Code not_compliant
ECCN Code EAR99 HTS Code 8541.29.00.75
Factory Lead Time 53 Weeks, 1 Day Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.0857 Case Connection COLLECTOR
Collector Current-Max (IC) 2 A Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DC Current Gain-Min (hFE) 1000
JESD-30 Code R-PSSO-G2 JESD-609 Code e2
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation Ambient-Max 10 W
Power Dissipation-Max (Abs) 10 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN COPPER
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10 Transistor Element Material SILICON
Transition Frequency-Nom (fT) 80 MHz

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