2SJ555
60A, 60V, 0.036ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN
在庫:4,764
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : 2SJ555
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パッケージ/ケース : TO-3P
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Brand : HITACHI
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Components Classification : Single FETs, MOSFETs
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日付シート : 2SJ555 データシート (PDF)
概要 2SJ555
Silicon P Channel MOS FET High Speed Power SwitchingFeatures • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
主な特長
- Low on-resistance
- RDS(on)= 0.017Ω typ.
- Low drive current.
- 4V gate drive devices.
- High speed switching.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Source Content uid | 2SJ555 | Pbfree Code | No |
Rohs Code | No | Part Life Cycle Code | Not Recommended |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | Part Package Code | TO-3P |
Package Description | TO-3P, 3 PIN | Pin Count | 3 |
Reach Compliance Code | ECCN Code | EAR99 | |
Date Of Intro | 1998-06-01 | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 60 A | Drain Current-Max (ID) | 60 A |
Drain-source On Resistance-Max | 0.036 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e0 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 125 W |
Pulsed Drain Current-Max (IDM) | 240 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | TIN LEAD |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
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