ACS102-6T1
TRIAC Diode with 600V Voltage Rating
在庫:8,806
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : ACS102-6T1
-
パッケージ/ケース : SOIC-8
-
Brand : Stmicroelectronics
-
Components Classification : TRIACs
-
日付シート : ACS102-6T1 データシート (PDF)
概要 ACS102-6T1
TRIAC Alternistor - Snubberless 600 V 200 mA Surface Mount 8-SOIC
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | Triacs | RoHS | Details |
Series | ACS102-6T | On-State RMS Current - It RMS | 200 mA |
Rated Repetitive Off-State Voltage VDRM | 600 V | Holding Current Ih Max | 20 mA |
Gate Trigger Voltage - Vgt | 900 mV | Gate Trigger Current - Igt | 5 mA |
Minimum Operating Temperature | - 30 C | Maximum Operating Temperature | + 125 C |
Mounting Style | SMD/SMT | Package / Case | SOIC-8 |
Brand | STMicroelectronics | Product Type | Triacs |
Factory Pack Quantity | 2000 | Subcategory | Thyristors |
Unit Weight | 0.017870 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![FDS4897AC](/files/uploads/product/s/0f4cd56fde34415da727df00ec69dcd3.webp)
FDS4897AC
Dual PowerTrench MOSFET for N and P-channel applications
![ACS110-7SN](/img/package/sot223.jpg)
ACS110-7SN
Product ACS110-7SN: Triacs rated at 1A and 700V for AC Line Switching
![MAC15A6G](/img/package/to220.jpg)
MAC15A6G
Case 221A-09, 3 Pin
![MAC12MG](/img/package/to220.jpg)
MAC12MG
) Gate Trigger 1.5V 35mA
![MAC15MG](/img/package/to220.jpg)
MAC15MG
Engineered to excel in high-performance full-wave AC control scenarios
![MAC16MG](/img/package/to220.jpg)
MAC16MG
MAC16MG Littelfuse, TRIAC, 600V 16A, Gate Trigger 1.5V 50mA, 3-Pin TO-220AB
![MAC4DSNT4G](/img/package/dpak2.jpg)
MAC4DSNT4G
This component is suitable for switching and regulating electrical currents
![MAC97A8G](/img/package/to92.jpg)
MAC97A8G
MAC97A8G is a two-way thyristor with a rating of 10mA forward current and 5mA reverse current, capable of handling voltages up to 800V
![MCAC90N10Y-TP](/img/package/power33.jpg)
MCAC90N10Y-TP
Compliant with ROHS standards, MCAC90N10Y-TP is a reliable choice for electronic systems requiring high voltage and current handling capabilities
![STAC2942B](/img/product.png)
STAC2942B
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
![SI9933ADY](/img/package/soic8.jpg)
SI9933ADY
8-pin SOIC package for easy installation
![BSP613PH6327XTSA1](/files/uploads/product/s/79ea39bd39754352bd269045c808aa00.webp)
BSP613PH6327XTSA1
P-MOSFET transistor with unipolar operation, -60V voltage rating, -2.9A current rating, and 1.8W power dissipation in PG-SOT223 package
![R6015ANZ](/img/package/to3pf.jpg)
R6015ANZ
N-Channel Silicon Metal-oxide Semiconductor FET with a TO-3PF package and 3 PIN configuration
![IXGK120N120A3](/img/package/to264.jpg)
IXGK120N120A3
N-channel insulated gate bipolar transistor with high voltage capability
![IRF7303PBF](/img/package/soic8.jpg)
IRF7303PBF
IRF7303PBF: Power MOSFET with 30V dual N-channel design, 50mOhms resistance, and 16.7nC gate charge
![SI1022R-T1-GE3](/img/package/sot23.jpg)
SI1022R-T1-GE3
MOSFET with a 60V drain-source voltage and a 20V gate-source voltage, packaged in SC75A
![LM3046M/NOPB](/img/package/soic14.jpg)
LM3046M/NOPB
LM3046M/NOPB represents a transistor array housed in a 14-SOIC package
![IRF640NSTRLPBF](/img/package/d2pak3.jpg)
IRF640NSTRLPBF
IRF640NSTRLPBF MOSFET: N Channel device in D2PAK package
![AONS66920](/img/package/power33.jpg)
AONS66920
Exclusive to OEMs and CMs
![IXGH6N170A](/img/package/to247ad.jpg)
IXGH6N170A
Non-punch-through type 75W 1.7kV TO-247-3 IGBTs