AOD11S60
AOD11S60: N-Channel 600V 11A Power MOSFET with DPAK Package
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部品番号 : AOD11S60
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パッケージ/ケース : TO252-2
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ブランド : Alpha & Omega Semiconductor Inc.
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : AOD11S60 データシート (PDF)
概要 AOD11S60
The AOD11S60 MOSFET is a powerhouse component, boasting a formidable 1100V drain-source voltage rating and an impressive 11A continuous drain current. With its low on-resistance of 0.6Ω, this MOSFET is a game-changer in power supply applications, delivering enhanced efficiency and reduced power dissipation. Its fast switching speed and low gate charge further solidify its position as a top contender for high-frequency operations
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| ECCN (US) | EAR99 | Part Status | NRND |
| HTS | 8541.29.00.95 | Category | Power MOSFET |
| Configuration | Single | Channel Mode | Enhancement |
| Channel Type | N | Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 600 | Maximum Gate Source Voltage (V) | ±30 |
| Maximum Continuous Drain Current (A) | 11 | Maximum Drain Source Resistance (mOhm) | 399@10V |
| Typical Gate Charge @ Vgs (nC) | 11@10V | Typical Gate Charge @ 10V (nC) | 11 |
| Typical Input Capacitance @ Vds (pF) | 545@100V | Maximum Power Dissipation (mW) | 208000 |
| Typical Fall Time (ns) | 20 | Typical Rise Time (ns) | 20 |
| Typical Turn-Off Delay Time (ns) | 59 | Typical Turn-On Delay Time (ns) | 20 |
| Minimum Operating Temperature (°C) | -55 | Maximum Operating Temperature (°C) | 150 |
| Typical Drain Source Resistance @ 25°C (mOhm) | 350@10V | Mounting | Surface Mount |
| Package Height | 2.29 | Package Width | 6.1 |
| Package Length | 6.6 | PCB changed | 2 |
| Tab | Tab | Standard Package Name | TO-252 |
| Supplier Package | DPAK | Pin Count | 3 |
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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