AS4C256M16D3L-12BIN

Unleash the power of the AS4C256M16D3L-12BIN, a synchronous DRAM module engineered for high-performance computing and networking tasks. With a formidable 4Gb capacity and organized as a 256Mx16 configuration, this module offers top-notch memory solutions for demanding applications. Operating at a voltage of 1.2V, it ensures efficient performance and reliability in diverse computing environments. Leveraging DDR3 technology, the AS4C256M16D3L-12BIN delivers faster data transfer rates, surpassing the capabilities of older DRAM modules. Crafted by Alliance Memory, a leading provider in the industry, this module is tailored for systems that require high-speed memory access and superior bandwidth capabilities. Whether deployed in servers, workstations, or high-end computing devices, the AS4C256M16D3L-12BIN guarantees exceptional memory performance and efficiency, setting a new standard in the realm of memory solutions

主な特長

• Organization: 262,144 words × 16 bits
• High speed
• - 30/35/50 ns RAS access time
• - 16/18/25 ns column address access time
• - 7/10/10/10 ns CAS access time
• Low power consumption
• - Active: 500 mW max (AS4C256K16E0-25)
• - Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25)
• EDO page mode
• Refresh
• - 512 refresh cycles, 8 ms refresh interval
• - RAS-only or CAS-before-RAS refresh or self-refresh
• - Self-refresh option is available for new generation device only. Contact Alliance for more information.
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
• - 400 mil, 40-pin SOJ
• - 400 mil, 40/44-pin TSOP II
• 5V power supply
• Latch-up current> 200 mA