AS7C31025B-12JCN
High-speed SRAM memory module with a capacity of 1M and operating at 3.3V
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $3.363 | $3.36 |
200 | $1.302 | $260.40 |
500 | $1.255 | $627.50 |
1000 | $1.234 | $1,234.00 |
在庫:5,888
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : AS7C31025B-12JCN
-
パッケージ/ケース : 32-SOJ
-
ブランド : Alliance Memory, Inc.
-
コンポーネントの分類 : メモリ
-
日付シート : AS7C31025B-12JCN データシート (PDF)
-
Series : AS7C31025B-12
概要 AS7C31025B-12JCN
Designed for performance and efficiency, the AS7C31025B-12JCN is a cutting-edge CMOS static RAM chip that offers high-speed access and low power consumption for a variety of applications. With a 32,768-word by 8-bit organization, this chip provides ample storage capacity while ensuring fast data retrieval and processing at a speed of 12 nanoseconds. Its versatility makes it an ideal choice for embedded systems, telecommunications devices, and industrial control systems where reliability and efficiency are paramount. By combining speed, capacity, and energy efficiency, the AS7C31025B-12JCN sets a new standard for memory chips in today's technology-driven world
主な特長
- Industrial and commercial temperatures
- Organization: 131,072 x 8 bits
- High speed
- - 10/12/15/20 ns address access time
- - 5, 6, 7, 8 ns output enable access time
- Low power consumption: ACTIVE
- - 252 mW / max @ 10 ns
- Low power consumption: STANDBY
- - 18 mW / max CMOS
- 6 T 0.18 u CMOS technology
- Easy memory expansion with CE, OE inputs
- Center power and ground
- TTL/LVTTL-compatible, three-state I/O
- JEDEC-standard packages
- - 32-pin, 300 mil SOJ
- - 32-pin, 400 mil SOJ
- ESD protection ≥ 2000 volts
- Latch-up current ≥ 200 mA
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ALLIANCE MEMORY INC |
Part Package Code | SOJ | Package Description | SOJ, |
Pin Count | 32 | Reach Compliance Code | compliant |
ECCN Code | 3A991.B.2.B | HTS Code | 8542.32.00.41 |
Samacsys Manufacturer | Alliance Memory | Access Time-Max | 12 ns |
JESD-30 Code | R-PDSO-J32 | JESD-609 Code | e3/e6 |
Length | 20.955 mm | Memory Density | 1048576 bit |
Memory IC Type | STANDARD SRAM | Memory Width | 8 |
Moisture Sensitivity Level | 3 | Number of Functions | 1 |
Number of Terminals | 32 | Number of Words | 131072 words |
Number of Words Code | 128000 | Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 128KX8 | Package Body Material | PLASTIC/EPOXY |
Package Code | SOJ | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Parallel/Serial | PARALLEL |
Seated Height-Max | 3.7084 mm | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 3 V | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount | YES | Technology | CMOS |
Temperature Grade | COMMERCIAL | Terminal Form | J BEND |
Terminal Pitch | 1.27 mm | Terminal Position | DUAL |
Width | 10.16 mm |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
AS29CF800T-55TIN
NOR Flash memory with 8Mbit capacity
AS4C128M16D2-25BIN
Operating at a low voltage of 1.8V, this DDR2 module offers efficient power consumption
AS4C128M16D3A-12BIN
DRAM 2G 1.5V 800MHz 128M x 16 DDR3
AS4C128M16D3LB-12BIN
FBGA-96(8x13) DDR SDRAM ROHS AS4C128M16D3LB-12BIN
AS4C16M16S-6TIN
Synchronous DRAM with 16MX16 configuration and 5.4ns speed
AS4C16M16SA-6BIN
EAR99 Surface Mount Tray 16MX16 ic memory 166MHz 5ns 8mm 268435456bit
AS4C32M16D1-5TCN
Synchronous DRAM, 32 megabytes by 16 bits, 0
AS4C32M16SC-7TIN
Surface Mount Tray
AS4C8M16S-6TIN
High-performance memory solution for demanding applications, ideal for embedded systems and networking device
AS6C4008-55SIN
2-pin serially-oriented static RAM
CY7C1049DV33-10ZSXI
CMOS, Lead Free
NT5CB128M16IP-EK
High-speed CMOS Module
M29W640FB70N6E
volatile memory
N25Q00AA11G1240E
24-Pin LBGA Tray package
24AA256UID-I/SN
4AA256UID-I/SN EEPROM
M29F160FB5AN6F2
NOR Flash Parallel 5V 16M-bit 2M x 8/1M x 16 55ns Automotive 48-Pin TSOP T/R
25LC256-I/ST
Low voltage EEPROM suitable for various electronic applications
W9864G6IH-6
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TSOP-II
SST27SF512-70-3C-PG
volatile memory technology
W25Q02JVTBIM
Flash Storage for Serial Devices