BC807-25
Reliable and efficient power management in small electronic circuits
在庫：3,072
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BC807-25
-
パッケージ/ケース : SOT23
-
ブランド : Diodes Incorporated
-
コンポーネントの分類 : Single Bipolar Transistors
-
日付シート : BC807-25 データシート (PDF)
概要 BC807-25
主な特長
- Motor driver circuitry
- Power converter topologies
- Saturable reactor design
- Radar signal processing
- Wireless sensor node control
応用
- Audio frequency circuits
- Low power signal amplification
- Communication driver stages
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 | Transistor Polarity | PNP |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 45 V |
| Emitter- Base Voltage VEBO | 5 V | Maximum DC Collector Current | 500 mA |
| Pd - Power Dissipation | 310 mW | Gain Bandwidth Product fT | 100 MHz |
| Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
| Series | BC807 | Brand | Diodes Incorporated |
| Continuous Collector Current | 500 mA | Height | 1 mm |
| Length | 3.05 mm | Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors | Technology | Si |
| Width | 1.4 mm | Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BC847BW,115
Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SC-70 T/R
BCP53T1G
SOT-223 Transistor BCP53T1G, PNP Junction Type with 80V Voltage and 1.5A Current Ratings, Packaged in Tape and Reel
BCW66GLT1G
Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R
BCP56-16T1G
A transistor with an NPN configuration capable of handling currents up to 1.0 A and voltages of 80 V
BC857CLT1G
TO-236AB packaged silicon transistor with a single element, suitable for small signal applications
BC856BLT1G
Product BC856BLT1G is a PNP bipolar transistor capable of handling currents up to 100mA and voltages up to 80V
BC847ALT1G
47ALT1G is a 3-Pin SOT-23 packaged Bipolar Transistor with NPN configuration
BC817-40LT1G
NPN Silicon Transistor TO-236 Package
BC817-16LT1G
NPN Bipolar Transistors with 500mA and 50V rating
BC63916-D27Z
NPN Transistor with Medium Power Rating
NTMFS4C03NT1G
Power MOSFET with N−Channel, 30V, 136A, 2.1mΩ
CM100DU-12H
Trans IGBT Module
SST112
Three-pin FET suitable for small-signal amplification and switching tasks
TSM2312CX
TSM2312CX power MOSFET
IPP60R180P7XKSA1
High-voltage N-channel MOSFET transistor in TO-220 package with 3 pins (3+tab)
FP30R06YE3
Insulated Gate Bipolar Transistor FP30R06YE3 is a module-23 device with a maximum current rating of 37A and a breakdown voltage of 600V
CPH3351-TL-H
351-TL-H Single P-Channel Power MOSFET
IRF7811AVTRPBF
IRF7811AVTRPBF is a MOSFET device designed for applications requiring a maximum voltage of 30V
IXGH20N60AU1
Power transistor with 3.0 V threshold voltage
IHW20N120R2
IGBT Transistors with Reverse Conducting Capabilities, 1200V 20A