BC817DS,115
Product BC817DS
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 5 | $0.092 | $0.46 |
| 50 | $0.075 | $3.75 |
| 150 | $0.066 | $9.90 |
| 500 | $0.059 | $29.50 |
| 3000 | $0.053 | $159.00 |
| 6000 | $0.052 | $312.00 |
在庫：8,403
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BC817DS,115
-
パッケージ/ケース : TSOP-6
-
Brand : Nexperia Usa Inc.
-
Components Classification : Bipolar Transistor Arrays
-
日付シート : BC817DS,115 データシート (PDF)
-
Series : BC817DS
概要 BC817DS,115
The BC817DS,115 also offers reliable performance across a wide temperature range from -65°C to +150°C, making it suitable for use in harsh environmental conditions. In summary, this versatile NPN transistor provides high current gain, low saturation voltage, and compact packaging, making it an excellent choice for a diverse range of electronic applications requiring efficient signal amplification and switching capabilities
主な特長
- The BC817DS,115 is suitable for general purpose NPN transistor applications
- This transistor has a high current rating of 500mA and voltage rating of 45V with hFE (current gain) of 200-450 and power dissipation of 625mW
- It is housed in a SOT-23 package making it ideal for small signal amplification and switching applications
応用
- Enhance your projects with ease
- Upgrade to the best
- Experience the difference
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Type number | BC817DS | Package version | SOT457 |
| Package name | TSOP6 | Size (mm) | 2.9 x 1.5 x 1 |
| Polarity | NPN | Configuration | 2 |
| Ptot (mW) | 370 | VCEO [max] (V) | 45 |
| IC [max] (mA) | 500 | hFE [min] | 160 |
| hFE [max] | 400 | fr [min] (MHz) | 100 |
| Packing | SOT457_115 | Orderable part number | BC817DS,115 |
| Chemical content | BC817DS |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BC847BW,115
Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SC-70 T/R
BCP53T1G
SOT-223 Transistor BCP53T1G, PNP Junction Type with 80V Voltage and 1.5A Current Ratings, Packaged in Tape and Reel
BCW66GLT1G
Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R
BCP56-16T1G
A transistor with an NPN configuration capable of handling currents up to 1.0 A and voltages of 80 V
BC857CLT1G
TO-236AB packaged silicon transistor with a single element, suitable for small signal applications
BC856BLT1G
Product BC856BLT1G is a PNP bipolar transistor capable of handling currents up to 100mA and voltages up to 80V
BC847ALT1G
47ALT1G is a 3-Pin SOT-23 packaged Bipolar Transistor with NPN configuration
BC817-40LT1G
NPN Silicon Transistor TO-236 Package
BC817-16LT1G
NPN Bipolar Transistors with 500mA and 50V rating
BC63916-D27Z
NPN Transistor with Medium Power Rating
BUK7575-100A
TO-220AB plastic package with 3 pins
IRFL4315TRPBF
Single-channel N-type power MOSFET with 185 milliOhm resistance and 12 nanocoulombs gate charge
MJW3281AG
The MJL Series TO-247 transistor is designed for high power applications
FS15R12YT3
This product, FS15R12YT3, is an IGBT module with N-channel configuration, engineered to withstand voltages of 1.2KV and currents up to 25A
SI7216DN-T1-E3
This device is ideal for power management and control circuits in various electronic systems
2N3738
TO-66(TO-213AA) Package
SI2312BDS-T1-E3
SOT-23 Power Mosfet, single N-Channel with 20V voltage and 0.031 Ohms resistance
SI4942DY
channel silicon metal-oxide semiconductor fet
SIS414DN-T1-GE3
Product Description: MOSFET SIS414DN-T1-GE3, with recommended alternative 78-SISA88DN-T1-GE3
2N3906TF
2N3906 - PNP Transistor, TO-92, 0.2A, 40V