BCX5316TA
BCX5316TA is a PNP silicon transistor capable of handling small signals, with a maximum collector current of 1A and a breakdown voltage of 80V
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 5 | $0.102 | $0.51 |
| 50 | $0.083 | $4.15 |
| 150 | $0.073 | $10.95 |
| 1000 | $0.066 | $66.00 |
| 2000 | $0.060 | $120.00 |
| 5000 | $0.057 | $285.00 |
在庫：5,028
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BCX5316TA
-
パッケージ/ケース : TO-243AA
-
ブランド : Diodes Incorporated
-
コンポーネントの分類 : Single Bipolar Transistors
-
日付シート : BCX5316TA データシート (PDF)
-
Series : BCX53
概要 BCX5316TA
Bipolar (BJT) Transistor PNP 80 V 1 A 150MHz 1 W Surface Mount SOT-89-3
主な特長
- BVCEO> -45V, -60V & -80V
- IC = -1A Continuous Collector Current
- ICM = -2A Peak Pulse Current
- Low Saturation Voltage VCE(SAT) <-500mV @ -0.5A
- Gain Groups 10 and 16
- Complementary NPN Types: BCX54, 55 and 56
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4)
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Status | Active | Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A | Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V | Power - Max | 1 W |
| Frequency - Transition | 150MHz | Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Package / Case | TO-243AA |
| Supplier Device Package | SOT-89-3 | Base Product Number | BCX5316 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BC847BW,115
Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SC-70 T/R
BCP53T1G
SOT-223 Transistor BCP53T1G, PNP Junction Type with 80V Voltage and 1.5A Current Ratings, Packaged in Tape and Reel
BCW66GLT1G
Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R
BCP56-16T1G
A transistor with an NPN configuration capable of handling currents up to 1.0 A and voltages of 80 V
BC857CLT1G
TO-236AB packaged silicon transistor with a single element, suitable for small signal applications
BC856BLT1G
Product BC856BLT1G is a PNP bipolar transistor capable of handling currents up to 100mA and voltages up to 80V
BC847ALT1G
47ALT1G is a 3-Pin SOT-23 packaged Bipolar Transistor with NPN configuration
BC817-40LT1G
NPN Silicon Transistor TO-236 Package
BC817-16LT1G
NPN Bipolar Transistors with 500mA and 50V rating
BC63916-D27Z
NPN Transistor with Medium Power Rating
BFT92W,115
Trans RF BJT PNP 15V 0.025A 300mW 3-Pin SC-70 T/R
SI4483ADY-T1-GE3
Package: Small Outline-8 (SO-8)
DMG3401LSN-7
Product Description: MOSFET 30V P-Channel Semiconductor - DMG3401LSN-7
MRF141
RF MOSFET Transistors RF Transistor
IPD09N03LA
Power MOSFET suitable for high-current applications
DTC113ZUAT106
The DTC113ZUAT106 has a high switching speed and low power consumption, making it suitable for various digital applications
IRFD210PBF
200V N-channel MOSFET with HEXFET HEXDI design
STB100NF04T4
STB100NF04T4 is a high-current N-channel MOSFET tailored for automotive applications
NPT2021
RF JFET Transistors featuring GaN HEMT technology, suitable for applications within the DC-2
2SC945A-A
SMALL SIGNAL BIPOLAR TRANSTR NPN