BSB017N03LX3G
Efficient power management made possible with BSB017N03LX3G's high-voltage capabilities
在庫：9,857
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSB017N03LX3G
-
パッケージ/ケース : 3-WDSON
-
ブランド : Infineon Technologies
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : BSB017N03LX3G データシート (PDF)
概要 BSB017N03LX3G
N-Channel 30 V 32A (Ta), 147A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | OptiMOS™ | Package | Tape & Reel (TR) |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 147A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 30A, 10V | Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 15 V | Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ | Package / Case | 3-WDSON |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BSC030N08NS5ATMA1
Tape and Reel Packaging for Automated Assembly
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
BSC046N10NS3GATMA1
Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP T/R
BSP170PH6327XTSA1
SIPMOS transistor BSP170PH6327XTSA1 designed for high efficiency and low power consumption
BSH103,235
TO-236AB package
BBS3002-TL-1E
With a voltage rating of 60V and a maximum current of 100A
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
BS170FTA
N-channel SOT-23 MOSFET with a rating of 60 volts and a current consumption of 150 microamps at 5 ohms when supplied with 10 volts
BSB044N08NN3GXUMA1
N-type Silicon MOSFET Transistor with 80V Voltage Rating and 18A Current Capacity for Automotive Applications
BSC009NE2LS5ATMA1
Transistor MOSFET N-channel 25V 41A 8-pin TDSON EP tape and reel
IRFPS40N50LPBF
Power Field-Effect Transistor with 46A I(D) and 500V
IXGH24N60A
IGBT Transistors with a current rating of 48 Amps and a voltage rating of 600V, featuring a low on-state resistance of 2.3 ohms
BSM100GB170DLC
N-Channel Insulated Gate Bipolar Transistor with 200A Current Rating and 1700V Voltage Rating, Packaged in Module-7
MMBTA92LT1
MMBTA92LT1, classified as a BJT, is a crucial component in electronic circuits for its signal amplification and switching capabilities
DMP4015SK3Q-13
MOSFET with a breakdown voltage (BVDSS) ranging from 31V to 40V
AOD3N50
N-Channel Power MOSFET with 500V Voltage Rating
BUK6D81-80EX
Trans MOSFET N-CH 80V 3.2A Automotive AEC-Q101 6-Pin DFN-MD EP T/R
APT20M38SVRG
The MOSFET has a low on-resistance of 38mΩ at 500mA and a power dissipation of 370W at 10V
IRF6217TRPBF
IRF6217TRPBF MOSFET N-channel 25V 303A PQFN-32
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current