BSC017N04NS G
N-channel MOSFET with a 40-volt rating and a 30-ampere current capacity
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $2.140 | $2.14 |
| 200 | $0.829 | $165.80 |
| 500 | $0.800 | $400.00 |
| 1000 | $0.786 | $786.00 |
在庫：7,758
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : BSC017N04NS G
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パッケージ/ケース : SuperSO8
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : BSC017N04NS G データシート (PDF)
概要 BSC017N04NS G
N-Channel 40 V 30A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1
主な特長
- Optimized for Synchronous Rectification
- 35% lower RDS(on) than alternative devices
- 45% improvement of FOM over similar devices
- Integrated Schottky-like diode
- RoHS compliant - halogen free
- MSL1 rated
- Benefits
- Highest system efficiency
- Less paralleling required
- Increased power density
- System cost reduction
- Very low voltage overshoot
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | OptiMOS™ | Product Status | Obsolete |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 1.7mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 85µA | Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 20 V |
| Power Dissipation (Max) | 2.5W (Ta), 139W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PG-TDSON-8-1 |
| Package / Case | 8-PowerTDFN |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
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