BSC093N04LS G
BSC093N04LS G MOSFET OptiMOS 3 N40V 13A TDSON8 RL
在庫:5,018
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : BSC093N04LS G
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パッケージ/ケース : SuperSO8
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Brand : Infineon
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Components Classification : Single FETs, MOSFETs
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日付シート : BSC093N04LS G データシート (PDF)
概要 BSC093N04LS G
The BSC093N04LSG is a power MOSFET transistor designed for high efficiency and power density applications. It features a low on-resistance of 5.3mΩ and a maximum drain-source voltage of 40V. This MOSFET has a compact footprint, with a small package size measuring 5mm x 6mm, making it ideal for applications where space is limited. It also has a high current rating of up to 120A, allowing it to handle high-power loads with ease.The BSC093N04LSG is designed for use in various power management applications such as motor control, DC-DC converters, and battery management systems. Its high efficiency and low on-resistance help to minimize power losses and improve overall system efficiency.In addition, this MOSFET is designed for high-speed switching applications, with a low gate charge of 77nC and a fast switching speed. This enables it to efficiently control power flow and reduce switching losses in high-frequency systems.
主な特長
- Higher current handling capacity
- Enhanced electromagnetic immunity
- Smoother operation with noise reduction
応用
- Power management systems
- Electronic control units
- Electric propulsion systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
IDpuls max | 196.0 A | RthJC max | 3.6 K/W |
Ptot max | 35.0 W | VDS max | 40.0 V |
Polarity | N | RDS (on) max | 13.7 mΩ |
Package | SuperSO8 5x6 | ID max | 49.0 A |
VGS(th) max | 2.0 V | VGS(th) min | 1.2 V |
Operating Temperature max | 150.0 °C | Operating Temperature min | -55.0 °C |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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