BSM150GB60DLC
BSM150GB60DLC is an Insulated Gate Bipolar Transistor capable of handling 180A of collector current and featuring a breakdown voltage of 600V
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $194.689 | $194.69 |
| 200 | $75.343 | $15,068.60 |
| 500 | $72.696 | $36,348.00 |
| 1000 | $71.387 | $71,387.00 |
在庫：8,625
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : BSM150GB60DLC
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パッケージ/ケース : MODULE
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Brand : Infineon Technologies
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Components Classification : IGBT Modules
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日付シート : BSM150GB60DLC データシート (PDF)
概要 BSM150GB60DLC
One of the standout features of the BSM150GB60DLC is its focus on safety and protection. The inclusion of a NTC thermistor for temperature sensing and protection demonstrates its commitment to preventing overheating and ensuring continuous, safe operation. The isolated base plate adds another layer of safety, reducing the risk of electrical faults and enhancing the overall safety of the module in industrial environments
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Modules | RoHS | N |
| Product | IGBT Silicon Modules | Configuration | Dual |
| Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.95 V |
| Continuous Collector Current at 25 C | 180 A | Gate-Emitter Leakage Current | 400 nA |
| Pd - Power Dissipation | 730 W | Package / Case | 32 mm |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
| Brand | Infineon Technologies | Height | 30.5 mm |
| Length | 94 mm | Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Chassis Mount | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Technology | Si | Width | 34 mm |
| Part # Aliases | SP000100476 BSM150GB60DLCHOSA1 | Unit Weight | 6.349313 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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