BSM200GA120DN2
300A Single Switch IGBT Module rated for 1200V
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $339.524 | $339.52 |
| 200 | $131.392 | $26,278.40 |
| 500 | $126.774 | $63,387.00 |
| 1000 | $124.493 | $124,493.00 |
在庫：9,621
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : BSM200GA120DN2
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パッケージ/ケース : Module
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Brand : Infineon Technologies
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Components Classification : IGBT Modules
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日付シート : BSM200GA120DN2 データシート (PDF)
概要 BSM200GA120DN2
Integration is a breeze with the BSM200GA120DN2, thanks to its user-friendly design and high thermal cycling capability. Plus, with low thermal resistance, you can trust that this module will perform reliably, even under tough conditions. Choose the BSM200GA120DN2 for your next project and experience the power of cutting-edge technology
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Modules | RoHS | Details |
| Product | IGBT Silicon Modules | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
| Continuous Collector Current at 25 C | 300 A | Gate-Emitter Leakage Current | 200 nA |
| Pd - Power Dissipation | 1.55 kW | Package / Case | 62 mm |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
| Brand | Infineon Technologies | Height | 36.5 mm |
| Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Chassis Mount | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Technology | Si | Width | 61.4 mm |
| Part # Aliases | SP000100725 BSM200GA120DN2HOSA1 | Unit Weight | 1 lb |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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