BSM300GA120DN2
IGBT Module for IGBT Transistor N-CH 1200V 430A 2500mW
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $427.190 | $427.19 |
200 | $165.316 | $33,063.20 |
500 | $159.507 | $79,753.50 |
1000 | $156.636 | $156,636.00 |
在庫:8,731
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSM300GA120DN2
-
パッケージ/ケース : 62 mm
-
Brand : Infineon
-
Components Classification : IGBT Modules
-
日付シート : BSM300GA120DN2 データシート (PDF)
概要 BSM300GA120DN2
The BSM300GA120DN2 power semiconductor module by Infineon Technologies is a high-performance component tailored for electric vehicle drives, industrial drives, and renewable energy systems. With its dual IGBT module, 300A current rating, and 1200V voltage rating, the module delivers exceptional power handling capabilities. Its advanced thermal management system ensures efficient heat dissipation, allowing for reliable operation even in the most demanding conditions. Additionally, the module incorporates built-in overcurrent and overtemperature protection circuits to safeguard the module and the entire system from potential damage
主な特長
- High power density for high efficiency applications
- Wide operating temperature range from -40°C to 125°C
- High surge current capability for safe operation
- Suitable for renewable energy systems, industrial drives, and power supplies
応用
- Efficient energy solutions
- Reliable power systems
- Advanced technology uses
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Modules | RoHS | Details |
Product | IGBT Silicon Modules | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
Continuous Collector Current at 25 C | 430 A | Gate-Emitter Leakage Current | 320 nA |
Pd - Power Dissipation | 2.5 kW | Package / Case | 62 mm |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Brand | Infineon Technologies | Height | 36.5 mm |
Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 61.4 mm |
Part # Aliases | SP000100730 BSM300GA120DN2HOSA1 | Unit Weight | 1 lb |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BSC030N08NS5ATMA1](/files/uploads/product/s/c7bace7d1c9e4b2db389cbf3579d1f18.webp)
BSC030N08NS5ATMA1
Tape and Reel Packaging for Automated Assembly
![BSC035N10NS5ATMA1](/files/uploads/product/s/5c0d25395ffd4311a23e4af97f7f6a0e.webp)
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
![BSC046N10NS3GATMA1](/files/uploads/product/s/9d4d364ff5584641ba1d62d44a63649a.webp)
BSC046N10NS3GATMA1
Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP T/R
![BSP170PH6327XTSA1](/files/uploads/product/s/ca0c35b0914847b3b82a947fa77b3eed.webp)
BSP170PH6327XTSA1
SIPMOS transistor BSP170PH6327XTSA1 designed for high efficiency and low power consumption
![BSH103,235](/files/uploads/product/s/cdb1406f2450444891811728e09cbc1a.webp)
BSH103,235
TO-236AB package
![BBS3002-TL-1E](/img/package/to263.jpg)
BBS3002-TL-1E
With a voltage rating of 60V and a maximum current of 100A
![BCM857BS,115](/img/package/sc70.jpg)
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
![BS170FTA](/img/package/sot23.jpg)
BS170FTA
N-channel SOT-23 MOSFET with a rating of 60 volts and a current consumption of 150 microamps at 5 ohms when supplied with 10 volts
![BSB044N08NN3GXUMA1](/img/package/son2.jpg)
BSB044N08NN3GXUMA1
N-type Silicon MOSFET Transistor with 80V Voltage Rating and 18A Current Capacity for Automotive Applications
![BSC009NE2LS5ATMA1](/img/package/power33.jpg)
BSC009NE2LS5ATMA1
Transistor MOSFET N-channel 25V 41A 8-pin TDSON EP tape and reel
![IXFB60N80P](/img/package/to-3.jpg)
IXFB60N80P
MOSFET capable of handling 60 Amps at 800V, offering a low on-resistance of 0.14
![APT50GT60BRDQ2G](/img/package/to247.jpg)
APT50GT60BRDQ2G
Inquire for more information
![DMC3400SDW-13](/img/package/sot363.jpg)
DMC3400SDW-13
Enhancement Mode MOSFET Pair with 30V Voltage Rating, 20Vgs, 55pF Capacitance, and 0.6nC Charge
![STR1P2UH7](/img/package/sot23.jpg)
STR1P2UH7
Transistor MOSFET P-channel with a voltage rating of 20 volts and a current rating of 1
![2SC4614S-AN](/img/package/sc70.jpg)
2SC4614S-AN
1.5A 160V NPN Bipolar Junction Transistors"
![BCX5616QTA](/img/package/sot893.jpg)
BCX5616QTA
BCX5616QTA: High-performance bipolar power transistor
![IRFR7546TRPBF](/img/package/dpak.jpg)
IRFR7546TRPBF
Reel Packaged N-Channel Silicon MOSFET Transistor with 60V Voltage and 71A Current Specifications
![SUM110P04-04L-E3](/img/package/d2pak3.jpg)
SUM110P04-04L-E3
MOSFET RECOMMENDED ALT 781-SUM110P04-05-E3
![SI9926BDY-T1-E3](/img/package/soic8.jpg)
SI9926BDY-T1-E3
MOSFET, Dual, N-Channel, 20V, 8.2A, 2W, SO-8 | Siliconix / Vishay SI9926BDY-T1-E3
![IRF7201PBF](/img/package/soic8.jpg)
IRF7201PBF
30V Drain-Source Voltage