BSM400GA170DLC
Single IGBT rated for 400A and 1700V
在庫：5,343
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSM400GA170DLC
-
パッケージ/ケース : 62 mm
-
Brand : Infineon
-
Components Classification : IGBT Modules
-
日付シート : BSM400GA170DLC データシート (PDF)
概要 BSM400GA170DLC
The BSM400GA170DLC power module by Mitsubishi Electric is a testament to the company's expertise in developing cutting-edge solutions for industrial power electronics. Boasting a maximum collector current of 400A and a collector-emitter voltage of 1700V, this module is engineered to deliver exceptional performance in high-power and high-voltage applications. Its low saturation voltage and minimal switching losses contribute to its remarkable efficiency and reliability, ensuring optimal operation in industrial settings. Furthermore, the inclusion of built-in temperature and overcurrent protection mechanisms reflects Mitsubishi Electric's dedication to prioritizing the safety and longevity of their products
主な特長
- Operating Temperature: -40°C to +150°C
- Voltage Tolerance: ±5%
- Current Ripple: ≤0.2A
- Pulse Width Modulation: PWM
- Efficiency Improvement: Up to 95%
応用
- Power electronics
- Advanced technology
- Reliable performance
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Modules | RoHS | Details |
| Product | IGBT Silicon Modules | Configuration | Single Dual Emitter |
| Collector- Emitter Voltage VCEO Max | 1.7 kV | Collector-Emitter Saturation Voltage | 2.6 V |
| Continuous Collector Current at 25 C | 800 A | Gate-Emitter Leakage Current | 200 nA |
| Pd - Power Dissipation | 3.12 kW | Package / Case | 62 mm |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
| Brand | Infineon Technologies | Height | 36.5 mm |
| Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Chassis Mount | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Technology | Si | Width | 61.4 mm |
| Part # Aliases | SP000100714 BSM400GA170DLCHOSA1 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BSC030N08NS5ATMA1
Tape and Reel Packaging for Automated Assembly
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
BSC046N10NS3GATMA1
Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP T/R
BSP170PH6327XTSA1
SIPMOS transistor BSP170PH6327XTSA1 designed for high efficiency and low power consumption
BSH103,235
TO-236AB package
BBS3002-TL-1E
With a voltage rating of 60V and a maximum current of 100A
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
BS170FTA
N-channel SOT-23 MOSFET with a rating of 60 volts and a current consumption of 150 microamps at 5 ohms when supplied with 10 volts
BSB044N08NN3GXUMA1
N-type Silicon MOSFET Transistor with 80V Voltage Rating and 18A Current Capacity for Automotive Applications
BSC009NE2LS5ATMA1
Transistor MOSFET N-channel 25V 41A 8-pin TDSON EP tape and reel
CE3512K2-C1
Trans RF FET N-CH 4V 0.068A 4-Pin Micro-X T/R
IRF5851TR
Mosfet Array 20V 2.7A
BLF184XRU
High Frequency N-Channel FET
SIA416DJ-T1-GE3
N-Channel MOSFET, 100V
IXGH6N170A
Non-punch-through type 75W 1.7kV TO-247-3 IGBTs
SISS23DN-T1-GE3
20V 50A Transistor
APT75GT120JRDQ3
APT75GT120JRDQ3, the 1200V Non-Punch-Thru IGBT, ensures reliable power control
BCW71,215
BCW71 BCW72 NPN transistors for general purposes TO-236 3-Pin
IRFH7084TRPBF
Infineon IRFH7084TRPBF N-channel MOSFET, 265 A, 40 V HEXFET, 8-Pin PQFN
IXFN150N65X2
Ultra Junction X2-Class Discrete Semiconductor Modules IXFN150N65X2: 650V/145A specifications