BSM75GB60DLC
Dual IGBT Modules with a maximum voltage of 600V and current rating of 75A
在庫:9,644
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSM75GB60DLC
-
パッケージ/ケース : 32 mm
-
ブランド : Infineon
-
コンポーネントの分類 : IGBT Modules
-
日付シート : BSM75GB60DLC データシート (PDF)
概要 BSM75GB60DLC
Within the heart of this module lie two IGBTs configured in a half-bridge layout, flanked by integrated freewheeling diodes, gate drivers, and temperature sensors. This amalgamation of components not only streamlines assembly but also minimizes spatial requirements, a boon for compact system designs
主な特長
- High-frequency switching up to 100kHz for high-power applications
- Precise current sensing and monitoring for optimal operation
- Suitable for motor drives, power supplies and industrial automation
- Compact and lightweight design for space constrained applications
応用
- Wind inverters
- Solar energy
- Energy storage
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Modules | RoHS | Details |
Product | IGBT Silicon Modules | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 2.2 V |
Continuous Collector Current at 25 C | 100 A | Gate-Emitter Leakage Current | 400 nA |
Pd - Power Dissipation | 355 W | Package / Case | 32 mm |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Brand | Infineon Technologies | Height | 30.5 mm |
Length | 94 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 34 mm |
Part # Aliases | SP000100469 BSM75GB60DLCHOSA1 | Unit Weight | 6.349313 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BSC030N08NS5ATMA1](/files/uploads/product/s/c7bace7d1c9e4b2db389cbf3579d1f18.webp)
BSC030N08NS5ATMA1
Tape and Reel Packaging for Automated Assembly
![BSC035N10NS5ATMA1](/files/uploads/product/s/5c0d25395ffd4311a23e4af97f7f6a0e.webp)
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
![BSC046N10NS3GATMA1](/files/uploads/product/s/9d4d364ff5584641ba1d62d44a63649a.webp)
BSC046N10NS3GATMA1
Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP T/R
![BSP170PH6327XTSA1](/files/uploads/product/s/ca0c35b0914847b3b82a947fa77b3eed.webp)
BSP170PH6327XTSA1
SIPMOS transistor BSP170PH6327XTSA1 designed for high efficiency and low power consumption
![BSH103,235](/files/uploads/product/s/cdb1406f2450444891811728e09cbc1a.webp)
BSH103,235
TO-236AB package
![BBS3002-TL-1E](/img/package/to263.jpg)
BBS3002-TL-1E
With a voltage rating of 60V and a maximum current of 100A
![BCM857BS,115](/img/package/sc70.jpg)
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
![BS170FTA](/img/package/sot23.jpg)
BS170FTA
N-channel SOT-23 MOSFET with a rating of 60 volts and a current consumption of 150 microamps at 5 ohms when supplied with 10 volts
![BSB044N08NN3GXUMA1](/img/package/son2.jpg)
BSB044N08NN3GXUMA1
N-type Silicon MOSFET Transistor with 80V Voltage Rating and 18A Current Capacity for Automotive Applications
![BSC009NE2LS5ATMA1](/img/package/power33.jpg)
BSC009NE2LS5ATMA1
Transistor MOSFET N-channel 25V 41A 8-pin TDSON EP tape and reel
![IPTG007N06NM5ATMA1](/img/package/so8.jpg)
IPTG007N06NM5ATMA1
N-Channel 60V 53A High-Speed Operational Gate Transistor
![RFP2N08L](/img/package/to220.jpg)
RFP2N08L
This powerful MOSFET delivers precise control and fast switching speeds for optimal system operation
![MPS2222AG](/img/package/to92.jpg)
MPS2222AG
33mm body height
![IXTH20P50P](/img/package/to247.jpg)
IXTH20P50P
Power MOSFET IXTH20P50P: The IXTH20P50P is a power MOSFET packaged in TO-247, featuring P Channel configuration
![PSMN040-100MSEX](/img/product.png)
PSMN040-100MSEX
Power MOSFET with N Channel, 100 V, 30 A, and 36.6 Milliohms
![SBC847BPDW1T1G](/img/package/sc70.jpg)
SBC847BPDW1T1G
SBC847BPDW1T1G product details: Bipolar Transistors - BJT ROHS, 45V 380mW 200@2mA, 5V 100mA NPN+PNP SOT-363-6
![TGI7785-120L](/img/product.png)
TGI7785-120L
Product: The TGI7785-120L is a high-power, internally matched transistor utilizing GaN HEMT technology
![AOB280L](/img/package/d2pak.jpg)
AOB280L
TO-263-3-packaged N-Channel MOSFET capable of handling 80 volts, meeting RoHS requirements
![IRF7331PBF](/img/package/soic8.jpg)
IRF7331PBF
The IRF7331PBF from Infineon boasts a dual N-channel MOSFET design capable of handling currents up to 7 amps and voltages of 20 volts
![IXTH96N25T](/img/package/to247.jpg)
IXTH96N25T
TO-247 MOSFETs ROHS: Description of Product IXTH96N25T