BSP125 L6327
Automotive grade
在庫:8,637
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSP125 L6327
-
パッケージ/ケース : TO-261-4
-
ブランド : Infineon Technologies
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : BSP125 L6327 データシート (PDF)
概要 BSP125 L6327
N-Channel 600 V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | SIPMOS® | Package | Tape & Reel (TR) |
Product Status | Obsolete | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 45Ohm @ 120mA, 10V | Vgs(th) (Max) @ Id | 2.3V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs | 6.6 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V | Power Dissipation (Max) | 1.8W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4-21 | Package / Case | TO-261-4, TO-261AA |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BSC030N08NS5ATMA1](/files/uploads/product/s/c7bace7d1c9e4b2db389cbf3579d1f18.webp)
BSC030N08NS5ATMA1
Tape and Reel Packaging for Automated Assembly
![BSC035N10NS5ATMA1](/files/uploads/product/s/5c0d25395ffd4311a23e4af97f7f6a0e.webp)
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
![BSC046N10NS3GATMA1](/files/uploads/product/s/9d4d364ff5584641ba1d62d44a63649a.webp)
BSC046N10NS3GATMA1
Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP T/R
![BSP170PH6327XTSA1](/files/uploads/product/s/ca0c35b0914847b3b82a947fa77b3eed.webp)
BSP170PH6327XTSA1
SIPMOS transistor BSP170PH6327XTSA1 designed for high efficiency and low power consumption
![BSH103,235](/files/uploads/product/s/cdb1406f2450444891811728e09cbc1a.webp)
BSH103,235
TO-236AB package
![BBS3002-TL-1E](/img/package/to263.jpg)
BBS3002-TL-1E
With a voltage rating of 60V and a maximum current of 100A
![BCM857BS,115](/img/package/sc70.jpg)
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
![BS170FTA](/img/package/sot23.jpg)
BS170FTA
N-channel SOT-23 MOSFET with a rating of 60 volts and a current consumption of 150 microamps at 5 ohms when supplied with 10 volts
![BSB044N08NN3GXUMA1](/img/package/son2.jpg)
BSB044N08NN3GXUMA1
N-type Silicon MOSFET Transistor with 80V Voltage Rating and 18A Current Capacity for Automotive Applications
![BSC009NE2LS5ATMA1](/img/package/power33.jpg)
BSC009NE2LS5ATMA1
Transistor MOSFET N-channel 25V 41A 8-pin TDSON EP tape and reel
![BCP69T1](/img/package/sot223.jpg)
BCP69T1
BCP69T1: PNP Bipolar Junction Transistor, 20 Volts, 1 Amp, Surface Mount, Tape and Reel
![BDX33CG](/img/package/to220.jpg)
BDX33CG
Plastic/Epoxy 3 Pin Transistor
![CM150DU-12F](/img/package/module.jpg)
CM150DU-12F
High-performance module with N-channel insulated gate bipolar transistors capable of handling up to 600V and 150A
![RSS065N06](/img/package/sop8.jpg)
RSS065N06
High-speed switching with G-S Protection Diode
![IRLD120PBF](/img/package/dip4.jpg)
IRLD120PBF
Vishay IRLD120PBF N-channel MOSFET Transistor, 1.3 A, 100 V, 4-Pin HVMDIP
![TSM2314CX](/img/package/sot23.jpg)
TSM2314CX
TSM2314CX product description
![NPT1012B](/img/product.png)
NPT1012B
High electron mobility transistor (HEMT) with 28V N-channel and 25W capability for frequencies up to 4000MHz
![IRG4PSC71K](/img/package/to3.jpg)
IRG4PSC71K
Power Semiconductor Component for Circuit Design
![FCB11N60TM](/img/package/d2pak3.jpg)
FCB11N60TM
This MOSFET, FCB11N60TM, operates within RoHS compliance standards, ensuring its environmental friendliness
![IRF5851TRPBF](/img/package/tsop6.jpg)
IRF5851TRPBF
IRF5851TRPBF product ID