BSS126H6327XTSA2
SOT23 PNP Transistor with 250x Amplification Factor, 45V VCE and 800mA IC Rating
在庫：5,451
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSS126H6327XTSA2
-
パッケージ/ケース : TO-236-3
-
Brand : Infineon Technologies
-
Components Classification : Single FETs, MOSFETs
-
日付シート : BSS126H6327XTSA2 データシート (PDF)
-
Series : BSS126
概要 BSS126H6327XTSA2
N-Channel 600 V 21mA (Ta) 500mW (Ta) Surface Mount PG-SOT23
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | SIPMOS® | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V | Current - Continuous Drain (Id) @ 25°C | 21mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V | Rds On (Max) @ Id, Vgs | 500Ohm @ 16mA, 10V |
| Vgs(th) (Max) @ Id | 1.6V @ 8µA | Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 5 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 28 pF @ 25 V |
| FET Feature | Depletion Mode | Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23 | Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | BSS126 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BSC030N08NS5ATMA1
Tape and Reel Packaging for Automated Assembly
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
BSC046N10NS3GATMA1
Trans MOSFET N-CH 100V 17A 8-Pin TDSON EP T/R
BSP170PH6327XTSA1
SIPMOS transistor BSP170PH6327XTSA1 designed for high efficiency and low power consumption
BSH103,235
TO-236AB package
BBS3002-TL-1E
With a voltage rating of 60V and a maximum current of 100A
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
BS170FTA
N-channel SOT-23 MOSFET with a rating of 60 volts and a current consumption of 150 microamps at 5 ohms when supplied with 10 volts
BSB044N08NN3GXUMA1
N-type Silicon MOSFET Transistor with 80V Voltage Rating and 18A Current Capacity for Automotive Applications
BSC009NE2LS5ATMA1
Transistor MOSFET N-channel 25V 41A 8-pin TDSON EP tape and reel
2SC5508-T2-A
RF Bipolar Transistors NPN High Frequency (Product 2SC5508-T2-A)
IRF7301TRPBF
IRF7301TRPBF is an N-channel silicon MOSFET suitable for applications requiring a maximum voltage of 20V and a current of up to 5
PSMN063-150D
N-channel MOSFET transistor with a maximum drain-source voltage of 150V and a drain current rating of 29A, packaged in TO-252AA format
DMP3017SFG-7
P-Channel 30V 11.5A Power Transistor
STA335A
With its LF400A packaging, the STA335A transistor comes in an 8-pin plastic/epoxy housing
IRGB10B60KDPBF
Trans IGBT Chip N-CH 600V 22A 156W 3-Pin(3+Tab) TO-220AB Tube
SI7113DN-T1-GE3
SI7113DN-T1-GE3 Silicon Reel
BC857BDW1T1
PNP Transistor with 45V Voltage Rating and 0.1A Current Rating
NX3008NBKS,115
Trans MOSFET N-CH 30V 0.35A Automotive AEC-Q101 6-Pin TSSOP T/R
DMP3036SSD-13
Enhanced Mode P-Channel MOSFET with a Voltage Drain-Source (Vdss) of -30V and a Gate-Source Voltage (Vgss) of 25V