BUZ906P

The BUZ906P N-channel enhancement mode power MOSFET is a powerhouse that excels in high-voltage and high-speed switching applications. Its outstanding specifications include a maximum drain-source voltage of 600 volts, continuous drain current of 5.8 amperes, and total power dissipation of 94 watts. This remarkable device features a low on-state resistance of just 1.3 ohms, ensuring minimal power loss and optimal efficiency in switching circuits. Its TO-247 package is renowned for its excellent thermal properties, making it an outstanding choice for high-power applications

主な特長

• Wide operating temperature range
• Compact form factor
• Suitable for outdoor use
• Durable against environmental factors

応用

• Power supply applications
• Motor control systems
• Industrial robotics use
• LED lighting solutions
• Solar energy inverters
• Welding equipment needs