CM150E3U-12H
Type: IGBT Module
在庫:8,657
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部品番号 : CM150E3U-12H
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パッケージ/ケース : Module
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Brand : Powerex Inc.
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Components Classification : IGBT Modules
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日付シート : CM150E3U-12H データシート (PDF)
概要 CM150E3U-12H
Mitsubishi Electric's CM150E3U-12H power transistor module is a reliable and efficient solution for high-power switching applications in energy, transportation, and manufacturing industries. Its insulated gate bipolar transistor (IGBT) technology enables high switching speeds and low on-state voltage drop, contributing to improved efficiency and reduced power losses. Additionally, the built-in overcurrent protection circuit ensures safe operation under fault conditions, making it a secure choice for demanding applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | IGBTMOD™ | Package | Bulk |
Product Status | Obsolete | Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 150 A |
Power - Max | 600 W | Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 150A |
Current - Collector Cutoff (Max) | 1 mA | Input Capacitance (Cies) @ Vce | 13.2 nF @ 10 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Package / Case | Module | Supplier Device Package | Module |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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