CM600HU-12H
This module features advanced transistor technology for efficient performance
在庫:7,867
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : CM600HU-12H
-
パッケージ/ケース : Module
-
Brand : Powerex Inc.
-
Components Classification : IGBT Modules
-
日付シート : CM600HU-12H データシート (PDF)
概要 CM600HU-12H
What sets the CM600HU-12H apart from other industrial modules is its ability to operate in extreme conditions. With a temperature range of -40 to 125 degrees Celsius, this module can withstand harsh environments without compromising on performance. Its high isolation voltage also guarantees safe operation in high-voltage applications, providing peace of mind to users relying on its robust capabilities
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | IGBTMOD™ | Package | Bulk |
Product Status | Obsolete | Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 600 A |
Power - Max | 1560 W | Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 600A |
Current - Collector Cutoff (Max) | 1 mA | Input Capacitance (Cies) @ Vce | 52.8 nF @ 10 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Package / Case | Module | Supplier Device Package | Module |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![CM800DZ-34H](/files/uploads/product/s/70fea8f8a3ec4de29b0a33c2ccdbb4e0.webp)
CM800DZ-34H
800A Insulated Gate Bipolar Transistor with a 1700V Breakdown Voltage, N-Channel Configuration, and MODULE-10 Form Factor
![BCM857DS,135](/img/package/sc70.jpg)
BCM857DS,135
Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin TSOP T/R
![BCM857BS,115](/img/package/sc70.jpg)
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
![CM1200HC-66H](/img/package/module.jpg)
CM1200HC-66H
3300V Voltage Breakdown N-Channel IGBT
![CM600E2Y-34H](/img/package/module.jpg)
CM600E2Y-34H
IGBT Modules for High Voltage Chopper Application
![BCM847BS,115](/img/package/sc70.jpg)
BCM847BS,115
Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
![FCMT080N65S3](/img/package/tdfn6.jpg)
FCMT080N65S3
Power MOSFET, N-Channel, SUPERFET III, Easy-Drive 650 V, 38 A, 80 mOhm
![PMCM4401UNEZ](/img/package/wlcsp4.jpg)
PMCM4401UNEZ
Trans MOSFET N-CH 20V 4.2A 4-Pin WLCSP T/R
![CM400HA-28H](/img/package/module.jpg)
CM400HA-28H
N-channel IGBT Module rated at 1.4KV and 400A, designated as CM400HA-28H
![CM2400HCB-34N](/img/package/module.jpg)
CM2400HCB-34N
Insulated Gate Bipolar Transistor, 2400A Collector Current, 1700V Breakdown Voltage, N-Channel, MODULE-9
![2SC4388](/img/package/to3pf.jpg)
2SC4388
TO-3PF Packaged NPN Transistor with 180V Maximum Voltage and 6A Maximum Current
![DNBT8105-7](/img/package/sot23.jpg)
DNBT8105-7
Described as DNBT8105-7, this product is a 60-volt, 600-milliwatt NPN bipolar transistor
![ZVN4106FTA](/img/package/sot23.jpg)
ZVN4106FTA
Metal-Oxide-Semiconductor Field-Effect Transistor N-Channel 60V
![BC847BPDW1T1G](/img/package/sc70.jpg)
BC847BPDW1T1G
BC847BPDW1T1G Bipolar RF Transistor NPN PNP 45 V 100 MHz 380 mW 100 mA 150 hFE
![IRFP3710PBF](/img/package/to247.jpg)
IRFP3710PBF
Transistor MOSFET N-channel with 100V voltage rating and 57A current capacity in a TO-247AC package
![MMBTA56-7-F](/img/package/sot23.jpg)
MMBTA56-7-F
Transistor General Purpose Bipolar Junction Transistor PNP 80V 0.5A 350mW 3-Pin SOT-23 Tape and Reel
![IKW50N60H3FKSA1](/img/package/to247.jpg)
IKW50N60H3FKSA1
IGBT Transistors designed for rapid switching
![ZXTC2063E6TA](/img/package/sot236.jpg)
ZXTC2063E6TA
ZXTC2063E6TA NPN/PNP Dual-Transistor, SOT23-6, 40V RoHScompatible
![TIP41CTU](/img/package/to220.jpg)
TIP41CTU
Epitaxial Silicon Transistor suitable for high power applications, TO-220-3 Package, TIP Series
![DMP4047LFDE-7](/files/uploads/product/s/28c59c4959f241acbce1aad2149fc2eb.webp)
DMP4047LFDE-7
Product DMP4047LFDE-7 is a P Channel MOSFET with a voltage rating of 40V and a current rating of 3.3A