FF1200R12IE5
1200V N-Channel Transistor IGBT Module with 1.2KA in Tray Packaging
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1,030.881 | $1,030.88 |
| 30 | $989.076 | $29,672.28 |
在庫：6,449
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FF1200R12IE5
-
パッケージ/ケース : Module
-
Brand : Infineon Technologies
-
Components Classification : IGBT Modules
-
日付シート : FF1200R12IE5 データシート (PDF)
-
Series : TRENCHSTOP IGBT5 - E5
概要 FF1200R12IE5
The FF1200R12IE5 power module from Infineon Technologies is a cutting-edge solution for high power applications. With a blocking voltage of 1200V and a continuous forward current rating of 1200A, this module is designed to meet the demands of industrial drives, wind turbines, and UPS systems. Its use of the latest semiconductor technology ensures high efficiency and reliability, making it an ideal choice for critical applications where performance is key. The low switching losses, low conduction losses, and high thermal stability of the FF1200R12IE5 set it apart from other power modules, providing consistent and efficient performance even in the most demanding conditions. Its advanced materials and construction techniques guarantee long-term reliability, while its ability to withstand a wide temperature range ensures consistent performance in any operating environment
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | PrimePACK™2 | Package | Tray |
| Product Status | Active | IGBT Type | Trench Field Stop |
| Configuration | Half Bridge | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 2400 A | Power - Max | 20 mW |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 1200A | Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 65.5 nF @ 25 V | Input | Standard |
| NTC Thermistor | Yes | Operating Temperature | -40°C ~ 175°C |
| Mounting Type | Chassis Mount | Package / Case | Module |
| Supplier Device Package | Module | Base Product Number | FF1200 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
FF11MR12W1M1B11BOMA1
FF11MR12W1M1B11BOMA1 EasyDUAL Module with CoolSiC™ Mosfet
FF150R12ME3G
The FF150R12ME3G IGBT module delivers a power output of 695W and can manage currents of up to 200A at 1
FF200R12KT3
ROHS certified Gate Drive ICs - FF200R12KT3
FF23MR12W1M1B11BOMA1
Transistor Module
FF300R12MS4
High Current N-Channel IGBT Module rated at 1.2KV
FF600R07ME4B11BOSA1
MEDIUM POWER ECONO IGBT Modules
FFB2227A
Trans GP BJT NPN/PNP 30V 0.5A 6-Pin SC-70 T/R
FFB3904
Trans GP BJT NPN 40V 0.2A 300mW 6-Pin SC-70 T/R
ZXMP2120FFTA
The ZXMP2120FFTA MOSFET is a P-channel device suitable for various applications
ZXTN07045EFFTA
5V 4A SOT23F, PK
SI7463DP-T1-E3
Vishay - SI7463DP-T1-E3
ZVN4525ZTA
Transistor metal-oxide-semiconductor field-effect transistor with a N-channel, 200 volts, and 0.24 amperes
MJD340T4
Bipolar Transistor NPN Type, TO-252 Enclosure
2SK1058-E
TO-3P N Channel MOSFET Tube
SI1499DH-T1-E3
Tape and Reel Packaged P-Channel 1.6A MOSFET with 6-Pin SC-70 Housing
IRF9393TRPBF
Product IRF9393TRPBF is a P Channel MOSFET with a voltage rating of 30V, a current rating of 9.2A, and a low on-resistance of 19.4mΩ at 10V
IXFN44N100P
Power Field-Effect Transistor with 37A current, 1000V voltage, and 0.22ohm resistance
APT50GN60BDQ2G
N-Channel Insulated Gate Bipolar Transistor
RSR030N06TL
MOSFET Medium Power Transistor
APT5010JVR
APT5010JVR Module