FF200R12KE4
1100mW power dissipation
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $242.786 | $242.79 |
200 | $93.955 | $18,791.00 |
500 | $90.652 | $45,326.00 |
1000 | $89.022 | $89,022.00 |
在庫:8,329
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FF200R12KE4
-
パッケージ/ケース : Module
-
Brand : Infineon Technologies
-
Components Classification : IGBT Modules
-
日付シート : FF200R12KE4 データシート (PDF)
概要 FF200R12KE4
In summary, the FF200R12KE4 is a high-power IGBT module designed for industrial use, delivering exceptional performance and reliability. Its advanced semiconductor technology, dual IGBT configuration, and built-in protection features make it a dependable choice for applications requiring high power levels and high operating frequencies. With its compact size, integrated heat sinks, and efficient thermal management, the FF200R12KE4 offers a versatile and reliable solution for industrial power requirements
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | C | Package | Tray |
Product Status | Active | IGBT Type | Trench Field Stop |
Configuration | Half Bridge | Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 240 A | Power - Max | 1100 W |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 200A | Current - Collector Cutoff (Max) | 5 mA |
Input Capacitance (Cies) @ Vce | 14 nF @ 25 V | Input | Standard |
NTC Thermistor | No | Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount | Package / Case | Module |
Supplier Device Package | Module | Base Product Number | FF200R12 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![FF11MR12W1M1B11BOMA1](/img/package/module.jpg)
FF11MR12W1M1B11BOMA1
FF11MR12W1M1B11BOMA1 EasyDUAL Module with CoolSiC™ Mosfet
![FF150R12ME3G](/img/package/module.jpg)
FF150R12ME3G
The FF150R12ME3G IGBT module delivers a power output of 695W and can manage currents of up to 200A at 1
![FF200R12KT3](/img/package/module.jpg)
FF200R12KT3
ROHS certified Gate Drive ICs - FF200R12KT3
![FF23MR12W1M1B11BOMA1](/img/package/module.jpg)
FF23MR12W1M1B11BOMA1
Transistor Module
![FF300R12MS4](/img/package/module.jpg)
FF300R12MS4
High Current N-Channel IGBT Module rated at 1.2KV
![FF600R07ME4B11BOSA1](/img/package/module.jpg)
FF600R07ME4B11BOSA1
MEDIUM POWER ECONO IGBT Modules
![FFB2227A](/img/package/sc70.jpg)
FFB2227A
Trans GP BJT NPN/PNP 30V 0.5A 6-Pin SC-70 T/R
![FFB3904](/img/package/sc70.jpg)
FFB3904
Trans GP BJT NPN 40V 0.2A 300mW 6-Pin SC-70 T/R
![ZXMP2120FFTA](/img/package/sot23f.jpg)
ZXMP2120FFTA
The ZXMP2120FFTA MOSFET is a P-channel device suitable for various applications
![ZXTN07045EFFTA](/img/package/sot233.jpg)
ZXTN07045EFFTA
5V 4A SOT23F, PK
![IRFS3107TRLPBF](/img/package/d2pak3.jpg)
IRFS3107TRLPBF
Supplied in tape and reel packaging
![BTB08-600TW](/img/package/to220ab.jpg)
BTB08-600TW
Explore the specifications of BTB08-600TW for your electronic projects
![DMP3030SN-7](/img/package/sot233.jpg)
DMP3030SN-7
30V 700mA MOSFET for various electronic applications
![DTC114YETL](/img/package/sot23.jpg)
DTC114YETL
00mA 3-Pin EMT T/R - Tape and Reel
![IXZ210N50L](/img/package/module.jpg)
IXZ210N50L
Metal-oxide Semiconductor IXZ210N50L
![IXYH40N90C3D1](/img/package/to247ad.jpg)
IXYH40N90C3D1
Transistor IXYH40N90C3D1, 900V, 90A, TO-247AD
![2N4403BU](/img/package/to92.jpg)
2N4403BU
625mW Power Dissipation
![IRF9540NSPBF](/img/package/to252.jpg)
IRF9540NSPBF
The IRF9540NSPBF MOSFET is a P-channel device designed for applications requiring a -100V voltage rating
![MJD2955T4](/img/package/dpak.jpg)
MJD2955T4
DPAK Packaged Bipolar PNP Transistor, Rated at 60V 10A
![IKW40N120H3FKSA1](/img/package/to247.jpg)
IKW40N120H3FKSA1
High Power Transistors