FF600R17ME4
Automotive Trans IGBT Module N-CH 1700V 950A with 11-Pin ECONOD-3 Tray
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $195.852 | $195.85 |
在庫:6,373
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FF600R17ME4
-
パッケージ/ケース : Module
-
Brand : Infineon
-
Components Classification : IGBT Modules
-
日付シート : FF600R17ME4 データシート (PDF)
概要 FF600R17ME4
In conclusion, the FF600R17ME4 sets the standard for high-power IGBT modules, delivering outstanding performance, efficiency, and reliability. Its advanced features and robust design make it a must-have for any application that requires high-power capabilities. Invest in the FF600R17ME4 for exceptional results and peace of mind knowing that your system is equipped with the best technology available
主な特長
- Fully compatible with industry-standard control systems
- Economic operation costs
- Excellent thermal conductivity and cooling
- Precise temperature monitoring and control
- Suitable for high-frequency switching applications
応用
- Innovative power technology
- Electric vehicle solutions
- Smart energy solutions
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
IC max | 600.0 A | Housing | EconoDUAL™ 3 |
Configuration | Dual | Qualification | Industrial |
Technology | IGBT4 - E4 | Voltage Class max | 1700.0 V |
Features | Solder Pin |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![FF11MR12W1M1B11BOMA1](/img/package/module.jpg)
FF11MR12W1M1B11BOMA1
FF11MR12W1M1B11BOMA1 EasyDUAL Module with CoolSiC™ Mosfet
![FF150R12ME3G](/img/package/module.jpg)
FF150R12ME3G
The FF150R12ME3G IGBT module delivers a power output of 695W and can manage currents of up to 200A at 1
![FF200R12KT3](/img/package/module.jpg)
FF200R12KT3
ROHS certified Gate Drive ICs - FF200R12KT3
![FF23MR12W1M1B11BOMA1](/img/package/module.jpg)
FF23MR12W1M1B11BOMA1
Transistor Module
![FF300R12MS4](/img/package/module.jpg)
FF300R12MS4
High Current N-Channel IGBT Module rated at 1.2KV
![FF600R07ME4B11BOSA1](/img/package/module.jpg)
FF600R07ME4B11BOSA1
MEDIUM POWER ECONO IGBT Modules
![FFB2227A](/img/package/sc70.jpg)
FFB2227A
Trans GP BJT NPN/PNP 30V 0.5A 6-Pin SC-70 T/R
![FFB3904](/img/package/sc70.jpg)
FFB3904
Trans GP BJT NPN 40V 0.2A 300mW 6-Pin SC-70 T/R
![ZXMP2120FFTA](/img/package/sot23f.jpg)
ZXMP2120FFTA
The ZXMP2120FFTA MOSFET is a P-channel device suitable for various applications
![ZXTN07045EFFTA](/img/package/sot233.jpg)
ZXTN07045EFFTA
5V 4A SOT23F, PK
![BCX5616QTA](/img/package/sot893.jpg)
BCX5616QTA
BCX5616QTA: High-performance bipolar power transistor
![IRF830APBF](/img/package/to220.jpg)
IRF830APBF
Featuring a TO-220AB package
![TK8S06K3L(T6L1,NQ)](/img/package/dpak.jpg)
TK8S06K3L(T6L1,NQ)
Automotive Grade N-Channel Silicon Transistor, 60V, 8A
![Z0103MN 5AA4](/img/package/sot223.jpg)
Z0103MN 5AA4
TRIAC 600V 8.5A 4-Pin(3+Tab) SOT-223 T/R
![NVJD4158CT1G](/img/package/sc70.jpg)
NVJD4158CT1G
Transistor MOSFET with N-Channel and P-Channel types, 30V and 20V respectively, and current ratings of 0.25A and 0.88A
![BTB16-600BWRG](/img/package/to220.jpg)
BTB16-600BWRG
TRIAC 600V 168A 3-Pin(3+Tab) TO-220AB Tube
![SI7905DN-T1-GE3](/files/uploads/product/s/b5be664753094f5ca826453855579540.webp)
SI7905DN-T1-GE3
MOSFET SI7923DN-GE3 suggested as a substitute for SI7905DN-T1-GE3
![2SC5964-TD-E](/img/package/sot89.jpg)
2SC5964-TD-E
NPN Bipolar Junction Transistor for General Purpose Applications
![CPH6350-TL-W](/img/package/sot23.jpg)
CPH6350-TL-W
With its -30V voltage rating and -6A current handling capability
![2SB1566](/img/package/to3.jpg)
2SB1566
Transistors for High-Power Amplification (-60V, -3A)