FGH40T65UPD
650-Volt N-Channel Transistor IGBT Chip
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $6.101 | $6.10 |
| 200 | $2.362 | $472.40 |
| 450 | $2.278 | $1,025.10 |
| 900 | $2.238 | $2,014.20 |
在庫：8,594
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : FGH40T65UPD
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パッケージ/ケース : TO-247
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ブランド : Onsemi
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コンポーネントの分類 : Single IGBTs
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日付シート : FGH40T65UPD データシート (PDF)
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Series : FGH40T65UPD
概要 FGH40T65UPD
Unleash the power of innovation with the FGH40T65UPD from ON Semiconductor. This series of field stop trench IGBTs is designed to provide exceptional performance in a variety of applications, including solar inverters, UPS systems, welders, and digital power generators. With its low conduction and switching losses, this product offers the efficiency and reliability needed to drive productivity and maximize performance in the most demanding industrial environments
主な特長
- The FGH40T65UPD has a voltage rating of 650V
- This IGBT module provides robust short circuit protection
- Frequent switching at high frequencies is supported
応用
- Oil and Gas Processing Units
- Energy Storage Solutions
- Agricultural Irrigation Systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247 |
| Mounting Style | Through Hole | Collector- Emitter Voltage VCEO Max | 650 V |
| Collector-Emitter Saturation Voltage | 2.1 V | Maximum Gate Emitter Voltage | - 20 V, + 20 V |
| Continuous Collector Current at 25 C | 80 A | Pd - Power Dissipation | 268 W |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Series | FGH40T65UPD | Brand | onsemi / Fairchild |
| Gate-Emitter Leakage Current | 400 nA | Product Type | IGBT Transistors |
| Factory Pack Quantity | 450 | Subcategory | IGBTs |
| Unit Weight | 0.225401 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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