FGL60N100BNTDTU
Insulated Gate Bipolar Transistor
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $17.721 | $17.72 |
| 10 | $17.029 | $170.29 |
| 25 | $15.831 | $395.78 |
| 100 | $13.115 | $1,311.50 |
在庫：6,543
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : FGL60N100BNTDTU
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パッケージ/ケース : TO-264-3
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Brand : onsemi
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Components Classification : Single IGBTs
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日付シート : FGL60N100BNTDTU データシート (PDF)
概要 FGL60N100BNTDTU
The FGL60N100BNTDTU product from ON Semiconductor boasts unparalleled performance with its proprietary trench design and advanced NPT technology. This 1000V NPT IGBT excels in both conduction and switching capabilities, ensuring superior overall performance in a variety of applications. Its high avalanche ruggedness and ease of parallel operation further solidify its position as a top choice for demanding hard switching applications
主な特長
- Advanced Fault Tolerant
- High Availability
- Easy Maintenance
- Long Life Cycle
応用
- Emergency Lighting
- Solar Energy Systems
- Telecommunications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| IGBT Type | NPT and Trench | Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector (Ic) (Max) | 60 A | Current - Collector Pulsed (Icm) | 120 A |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A | Power - Max | 180 W |
| Input Type | Standard | Gate Charge | 275 nC |
| Td (on/off) @ 25°C | 140ns/630ns | Test Condition | 600V, 60A, 51Ohm, 15V |
| Reverse Recovery Time (trr) | 1.2 µs | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | TO-264-3 | Base Product Number | FGL60N100 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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