FQA24N50F
The FQA24N50F is a 500V N-channel MOSFET designed for rail applications, featuring a 24A current capacity and a TO-3PN package
在庫：6,527
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FQA24N50F
-
パッケージ/ケース : TO3PN-3
-
ブランド : Onsemi
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : FQA24N50F データシート (PDF)
概要 FQA24N50F
The FQA24N50F is a highly efficient MOSFET power transistor that is ideal for high power applications. With a VDS rating of 500V and an ID rating of 24A, this transistor is built to handle heavy power loads with ease. Its low RDS(on) of 0.18 ohms ensures that power conduction is efficient, leading to reduced power dissipation and improved overall performance
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-3PN-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 500 V |
| Id - Continuous Drain Current | 24 A | Rds On - Drain-Source Resistance | 200 mOhms |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 290 W |
| Channel Mode | Enhancement | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 155 ns |
| Forward Transconductance - Min | 22 S | Height | 20.1 mm |
| Length | 16.2 mm | Product Type | MOSFET |
| Rise Time | 250 ns | Factory Pack Quantity | 30 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | MOSFET | Typical Turn-Off Delay Time | 200 ns |
| Typical Turn-On Delay Time | 80 ns | Width | 5 mm |
| Part # Aliases | FQA24N50F_NL | Unit Weight | 0.162260 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
FQP19N20
FQP19N20 is a MOSFET featuring N-Channel QFET technology, suitable for applications requiring a 200V rating
FQP7N80C
N-Channel Power MOSFET from the QFET® series, capable of handling high voltage levels up to 800 V while offering a low on-resistance of 1.9 Ω
FQPF65N06
N-type channel silicon MOSFET
FQD20N06TM
Trans MOSFET N-CH 60V 16.8A 3-Pin(2+Tab) DPAK T/R
FQT3P20TF
Transistor MOSFET P-channel 200V 0.67A 4-SOT-223
BFQ67,215
Transistor Gp Bjt NPN 10V 0.05A 3-PIN TO-236AB T/r
FQA90N08
Trans MOSFET N-CH 80V 90A 3-Pin(3+Tab) TO-3P Tube
FQA65N20
Compliance: ROHS
FQA28N50F
3+Tab Configurations
FQA9P25
Trans MOSFET P-CH 250V 10.5A 3-Pin(3+Tab) TO-3P Tube
2SK1489(Q)
Metal-Oxide-Semiconductor Field-Effect Transistor N-Channel 1000V 12A TO-3PL
MUN5111DW1T1G
Trans Digital BJT PNP 50V
IXFN360N15T2
Power MOSFET transistor with N-channel configuration, rated for 150V and a maximum current of 310A
CA3096AE
Array Independent Bipolar Junction Transistor DIP
BUZ31LH
Maximum current rating of 13.5A
NTJD5121NT2G
SC88D 60V 295mA NFET MOSFET
IRFB31N20DPBF
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm
IRFZ14PBF
ROHS compliant and suitable for various electronic applications requiring high power handling
2N5002
Trans GP BJT NPN 80V 5A 2000mW 3-Pin TO-59 Tray
MRFE6VP5600HR5
MRFE6VP5600HR5 - RF MOSFET Transistors VHV6 600W 50V NI1230H