FS75R12KE3_B3
Module-34 Insulated Gate Bipolar Transistor, N-Channel, 100A I(C), 1200V V(BR)CES
在庫：5,406
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部品番号 : FS75R12KE3_B3
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パッケージ/ケース : Econo 3
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Brand : Infineon
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Components Classification : IGBT Modules
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日付シート : FS75R12KE3_B3 データシート (PDF)
概要 FS75R12KE3_B3
The FS75R12KE3_B3 is a top-tier insulated gate bipolar transistor (IGBT) module engineered by Infineon Technologies, tailored for the demands of industrial applications that necessitate robust power switching capabilities and optimal energy usage. With a voltage rating of 1200V and a current rating of 75A, this IGBT module is ideal for propelling large motors, inverters, and other high-power electronic devices. Its low thermal resistance ensures efficient heat dissipation, securing consistent performance even under heavy loads
主な特長
- Compact power supply design
- High voltage DC-DC converter module
- Low EMI and high reliability
応用
- Electric vehicle technology
- Energy-efficient solutions
- Sustainable power systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Modules | Product | IGBT Silicon Modules |
| Configuration | Hex | Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Continuous Collector Current at 25 C | 100 A | Package / Case | Econo 3 |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
| Brand | Infineon Technologies | Height | 17 mm |
| Length | 122 mm | Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Chassis Mount | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Technology | Si | Width | 62 mm |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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