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HGTP12N60C3D

Ideal for motor control, power supplies, and other high-power electronic system

数量 単価(USD) 合計金額
1 $6.920 $6.92
200 $2.678 $535.60
500 $2.585 $1,292.50
800 $2.538 $2,030.40

在庫：8,431

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください HGTP12N60C3D このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 HGTP12N60C3D

Designed to meet the demands of high voltage switching applications, the HGTP12N60C3D is a sophisticated MOS gated device that combines the best attributes of MOSFETs and bipolar transistors. By maximizing the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor, this device offers superior performance and efficiency. With a relatively stable on-state voltage drop that only experiences moderate fluctuations between 25°C and 150°C, the HGTP12N60C3D ensures consistent operation even in challenging environmental conditions. Featuring the innovative IGBT TA49123 and anti-parallel diode TA49188, this product is optimized for applications requiring high voltage switching at moderate frequencies. The HGTP12N60C3D, previously known as Developmental Type TA49182, represents a cutting-edge solution for industries seeking reliable and energy-efficient switching components

主な特長

  • 500mA, 1000V at TC= 25°C
  • Ultra Low Leakage Current
  • Pulse Width Modulation
  • Flyback Diode
  • Soft Start Feature
  • Eddy-Current Optimization

応用

  • Sports
  • Retail
  • Transportation

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Source Content uid HGTP12N60C3D Pbfree Code Yes
Part Life Cycle Code End Of Life Ihs Manufacturer ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3 Manufacturer Package Code 340AT
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer onsemi Additional Feature RC-IGBT
Case Connection COLLECTOR Collector Current-Max (IC) 24 A
Collector-Emitter Voltage-Max 600 V Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 275 ns Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Max (toff) 675 ns Turn-off Time-Nom (toff) 480 ns
Turn-on Time-Nom (ton) 48 ns VCEsat-Max 2.2 V

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

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