IDH10G120C5XKSA1
Schottky Diode 1200V 31.9A in TO-220 Tube
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $4.704 | $4.70 |
| 200 | $1.820 | $364.00 |
| 500 | $1.757 | $878.50 |
| 1000 | $1.726 | $1,726.00 |
在庫：5,537
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : IDH10G120C5XKSA1
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パッケージ/ケース : TO-220-2
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ブランド : Infineon Technologies
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コンポーネントの分類 : Single Diodes
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日付シート : IDH10G120C5XKSA1 データシート (PDF)
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Series : IDH10G120C5
概要 IDH10G120C5XKSA1
Diode 1200 V 10A Through Hole PG-TO220-2-1
主な特長
- Vbr at 650V
- Improved Figure of Merit (Qc x Vf)
- No reverse recovery charge
- Soft switching reverse
- recovery waveform
- Temperature independent
- switching behavior
- High operating temperature
- (Tj max 175°C)
- Improved surge capability
- Pb-free lead plating
- 10 years manufacturing of SiC diodes
- Benefts
- Higher safety margin against
- Overvoltage; best match with
- CoolMOS™ 650V products
- Improved efciency over all
- load conditions
- Increased efciency compared to
- Silicon Diode alternatives
- Reduced EMI compared to snappier
- Silicon diode reverse recovery
- waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- High quality know-how and capacity
- in SiC diode manufacture
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | CoolSiC™+ | Package | Tube |
| Product Status | Active | Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A | Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | Current - Reverse Leakage @ Vr | 62 µA @ 1200 V |
| Capacitance @ Vr, F | 525pF @ 1V, 1MHz | Mounting Type | Through Hole |
| Package / Case | TO-220-2 | Supplier Device Package | PG-TO220-2-1 |
| Operating Temperature - Junction | -55°C ~ 175°C | Base Product Number | IDH10G120 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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