IGT60R070D1ATMA1
INFINEON IGT60R070D1ATMA1: A power MOSFET featuring N-channel configuration
在庫:9,759
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部品番号 : IGT60R070D1ATMA1
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パッケージ/ケース : 8-PowerSFN
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : IGT60R070D1ATMA1 データシート (PDF)
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Series : IGT60R070D1
概要 IGT60R070D1ATMA1
N-Channel 600 V 31A (Tc) 125W (Tc) Surface Mount PG-HSOF-8-3
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | CoolGaN™ | Product Status | Obsolete |
FET Type | N-Channel | Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 600 V | Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Vgs(th) (Max) @ Id | 1.6V @ 2.6mA | Vgs (Max) | -10V |
Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V | Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | PG-HSOF-8-3 | Package / Case | 8-PowerSFN |
Base Product Number | IGT60R070 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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