IRF1010NSPBF
IRF1010NSPBF is a MOSFET with a 55V rating, designed as a 1 N-CH HEXFET with a low on-state resistance of 11mOhms and a high gate charge of 80nC
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部品番号 : IRF1010NSPBF
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パッケージ/ケース : TO252-3
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ブランド : Infineon Technologies
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : IRF1010NSPBF データシート (PDF)
概要 IRF1010NSPBF
The IRF1010NSPBF power MOSFET is a versatile component that offers exceptional performance in high-power applications. With a continuous drain current of 84A and a maximum drain-source voltage of 60V, this N-channel MOSFET is capable of handling demanding power requirements with ease. Its low on-state resistance of 9.5mΩ ensures efficient power delivery and minimal energy loss, making it ideal for a wide range of industrial and automotive applications
応用
SWITCHING仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 55 V |
| Id - Continuous Drain Current | 84 A | Rds On - Drain-Source Resistance | 11 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 80 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 3.8 W |
| Channel Mode | Enhancement | Brand | Infineon Technologies |
| Configuration | Single | Fall Time | 48 ns |
| Forward Transconductance - Min | 32 S | Height | 2.3 mm |
| Length | 6.5 mm | Product Type | MOSFET |
| Rise Time | 76 ns | Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 39 ns |
| Typical Turn-On Delay Time | 13 ns | Width | 6.22 mm |
| Part # Aliases | SP001559426 | Unit Weight | 0.011640 oz |
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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